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APT80GA90B

Microsemi APT80GA90B

900 V145 A1652µJ(开),1389µJ(关)-55°C ~ 150°C(TJ)TO-247-3

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APT80GA90B
IGBT 900V 145A 625W TO247
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¥1.94

价格更新:一个月前

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产品详情

Overview

The APT80GA60LD40 is IGBT 600V 143A 625W TO264, that includes POWER MOS 8? Series, they are designed to operate with a Tube Packaging, Unit Weight is shown on datasheet note for use in a 0.373904 oz, that offers Mounting Style features such as SMD/SMT, Tradename is designed to work in POWER MOS 8, as well as the TO-264-3, TO-264AA Package Case, the device can also be used as Standard Input Type. In addition, the Mounting Type is Through Hole, the device is offered in TO-264 Supplier Device Package, the device has a Single of Configuration, and Power Max is 625W, and the Reverse Recovery Time trr is 22ns, and Current Collector Ic Max is 143A, and the Voltage Collector Emitter Breakdown Max is 600V, and IGBT Type is PT, and the Current Collector Pulsed Icm is 240A, and Vce on Max Vge Ic is 2.5V @ 15V, 47A, and the Switching Energy is 840μJ (on), 751μJ (off), and Gate Charge is 230nC, and the Td on off 25°C is 23ns/158ns, and Test Condition is 400V, 47A, 4.7 Ohm, 15V, and the Pd Power Dissipation is 625 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Collector Emitter Voltage VCEO Max is 600 V, and the Collector Emitter Saturation Voltage is 2 V, and Continuous Collector Current at 25 C is 143 A, and the Gate Emitter Leakage Current is 100 nA, and Maximum Gate Emitter Voltage is 30 V, and the Continuous Collector Current Ic Max is 143 A.

The APT80F60J is Discrete Semiconductor Modules Power FREDFET - MOS8 manufactured by APT. The APT80F60J is available in MODULE Package, is part of the Module, , and with support for Discrete Semiconductor Modules Power FREDFET - MOS8, N-Channel 600V 84A (Tc) 961W (Tc) Chassis Mount ISOTOP?.

Features

Tube Package
PT IGBT Type
900 V Voltage - Collector Emitter Breakdown (Max)
145 A Current - Collector (Ic) (Max)
239 A Current - Collector Pulsed (Icm)
3.1V @ 15V, 47A Vce(on) (Max) @ Vge, Ic
625 W Power - Max
1652µJ (on), 1389µJ (off) Switching Energy
Standard Input Type
200 nC Gate Charge
18ns/149ns Td (on/off) @ 25°C
600V, 47A, 4.7Ohm, 15V Test Condition
Through Hole Mounting Type
产品属性
全选
包装: 管件
部件状态: 在售
IGBT 类型: PT
最大集电极-发射极击穿电压: 900 V
集电极电流 (Ic)(最大值): 145 A
电流 - 集电极脉冲 (Icm): 239 A
栅极-发射极电压和集电极电流时的最大集电极-发射极导通电压: 3.1V @ 15V,47A
最大功率: 625 W
开关能量: 1652µJ(开),1389µJ(关)
输入类型: 标准
栅极电荷: 200 nC
25°C 时的开/关延迟时间: 18ns/149ns
测试条件: 600V,47A,4.7 欧姆,15V
工作温度: -55°C ~ 150°C(TJ)
安装类型: 通孔
封装/外壳: TO-247-3
供应商器件封装: TO-247 [B]
Microsemi Corporation

Microsemi Corporation

Microsemi Corporation是一家提供高性能半导体和系统解决方案的公司,专注于通信、国防与安全、航空和工业市场。公司成立于1959年,总部位于美国加利福尼亚州阿利索维耶荷。Microsemi于2018年被Microchip Technology收购。

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