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APTDF60H1201G

Microsemi APTDF60H1201G

1.2 kV82 A-40°C ~ 175°C(TJ)SP1

比较
APTDF60H1201G
BRIDGE RECT 1PHASE 1.2KV 82A SP1
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比较

¥328.68

价格更新:一个月前

博斯克质量保证

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产品详情

Overview

The APTDF500U20G is DIODE MODULE 200V 500A LP4, that includes Diode Power Modules Product, they are designed to operate with a Switching Diode Type, Packaging is shown on datasheet note for use in a Bulk, that offers Mounting Style features such as Screw, it has an Operating Temperature Range range of - 40 C to + 150 C, as well as the LP4 Package Case, the device can also be used as Chassis Mount Mounting Type. In addition, the Supplier Device Package is LP4, the device is offered in Single Configuration, the device has a Fast Recovery = 200mA (Io) of Speed, and Diode Type is Standard, and the Current Reverse Leakage Vr is 2.5mA @ 200V, and Voltage Forward Vf Max If is 1.1V @ 500A, and the Voltage DC Reverse Vr Max is 200V, and Current Average Rectified Io is 500A, and the Reverse Recovery Time trr is 70ns, and Vf Forward Voltage is 1 V, and the Output Current is 500 A, and Vr Reverse Voltage is 200 V.

The APTDF500U40G is DIODE MODULE 400V 500A LP4, that includes 500A Current Average Rectified Io, they are designed to operate with a 2.5mA @ 400V Current Reverse Leakage Vr, Diode Type is shown on datasheet note for use in a Standard, that offers Mounting Type features such as Chassis Mount, Package Case is designed to work in LP4, as well as the Bulk Packaging, the device can also be used as 120ns Reverse Recovery Time trr. In addition, the Speed is Fast Recovery = 200mA (Io), the device is offered in LP4 Supplier Device Package, the device has a 400V of Voltage DC Reverse Vr Max, and Voltage Forward Vf Max If is 1.5V @ 500A.

Features

Bulk Package
12 pin count
82A forward voltage
forward voltage of 82A
SP1 package
operating at a temperature of -40°C~175°C TJ
peak reverse voltage of 100μA
a reverse voltage peak of 100μA

SP1 Supplier Device Package

Applications


There are a lot of Microsemi Corporation
APTDF60H1201G applications of bridge rectifiers.

  • High forward surge current capability
  • Low thermal resistance
  • Extremely robust construction
  • Fuse-in-glass diodes design
  • Electrically isolated aluminum case
  • Motor controls – Low Voltage and Medium Voltage converters
  • SCR power bridges for solid state starters
  • SCR and diode based input rectifiers
  • Crowbar systems for motor drives
  • Wind power (alternative energy) – Converters available as diodes, SCRs or IGBTs
产品属性
全选
包装: 散装
部件状态: 在售
二极管类型: Single Phase
技术: 标准
最大峰值反向电压: 1.2 kV
平均整流电流 (Io): 82 A
正向电流时的最大正向电压: 3 V @ 60 A
不同 Vr 时电流 - 反向泄漏: 100 µA @ 1200 V
工作温度: -40°C ~ 175°C(TJ)
安装类型: 底座安装
封装/外壳: SP1
供应商器件封装: SP1
Microsemi Corporation

Microsemi Corporation

Microsemi Corporation是一家提供高性能半导体和系统解决方案的公司,专注于通信、国防与安全、航空和工业市场。公司成立于1959年,总部位于美国加利福尼亚州阿利索维耶荷。Microsemi于2018年被Microchip Technology收购。

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