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APTDF200H120G

Microsemi APTDF200H120G

1.2 kV235 A-40°C ~ 175°C(TJ)SP6

比较
APTDF200H120G
BRIDGE RECT 1P 1.2KV 235A SP6
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比较

¥1101.46

价格更新:一个月前

博斯克质量保证

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产品详情

Overview

The APTDF200H100G is DIODE MODULE FULL BRIDGE SP6, that includes Bulk Packaging, they are designed to operate with a SP6 Package Case, Mounting Type is shown on datasheet note for use in a Chassis Mount, that offers Supplier Device Package features such as SP6, Diode Type is designed to work in Single Phase, as well as the 1000V Voltage Peak Reverse Max, the device can also be used as 255A Current DC Forward If Max.

The APTDF100H60G is DIODE MODULE FULL BRIDGE SP4, that includes 135A Current DC Forward If Max, they are designed to operate with a Single Phase Diode Type, Mounting Type is shown on datasheet note for use in a Chassis Mount, that offers Package Case features such as SP4, Packaging is designed to work in Bulk, as well as the SP4 Supplier Device Package, the device can also be used as 600V Voltage Peak Reverse Max.

Features

Bulk Package
Single Phase Diode Type
Standard Technology
1.2 kV Voltage - Peak Reverse (Max)
235 A Current - Average Rectified (Io)
3 V @ 200 A Voltage - Forward (Vf) (Max) @ If
150 µA @ 1200 V Current - Reverse Leakage @ Vr
Chassis Mount Mounting Type
SP6 Package / Case
SP6 Supplier Device Package
产品属性
全选
包装: 散装
部件状态: 在售
二极管类型: Single Phase
技术: 标准
最大峰值反向电压: 1.2 kV
平均整流电流 (Io): 235 A
正向电流时的最大正向电压: 3 V @ 200 A
不同 Vr 时电流 - 反向泄漏: 150 µA @ 1200 V
工作温度: -40°C ~ 175°C(TJ)
安装类型: 底座安装
封装/外壳: SP6
供应商器件封装: SP6
Microsemi Corporation

Microsemi Corporation

Microsemi Corporation是一家提供高性能半导体和系统解决方案的公司,专注于通信、国防与安全、航空和工业市场。公司成立于1959年,总部位于美国加利福尼亚州阿利索维耶荷。Microsemi于2018年被Microchip Technology收购。

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