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APT45GR65B

Microsemi APT45GR65B

650 V92 A900µJ(开),580µJ(关)TO-247-3

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APT45GR65B
IGBT 650V 92A 357W TO-247
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¥34.67

价格更新:一个月前

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产品详情

Overview

The APT45GP120BG is IGBT 1200V 100A 625W TO247, that includes POWER MOS 7R Series, they are designed to operate with a Tube Packaging, Unit Weight is shown on datasheet note for use in a 1.340411 oz, that offers Mounting Style features such as Through Hole, Tradename is designed to work in POWER MOS 7 IGBT, as well as the TO-247-3 Package Case, the device can also be used as Standard Input Type. In addition, the Mounting Type is Through Hole, the device is offered in TO-247 [B] Supplier Device Package, the device has a Single of Configuration, and Power Max is 625W, and the Current Collector Ic Max is 100A, and Voltage Collector Emitter Breakdown Max is 1200V, and the IGBT Type is PT, and Current Collector Pulsed Icm is 170A, and the Vce on Max Vge Ic is 3.9V @ 15V, 45A, and Switching Energy is 900μJ (on), 904μJ (off), and the Gate Charge is 185nC, and Td on off 25°C is 18ns/102ns, and the Test Condition is 600V, 45A, 5 Ohm, 15V, and Pd Power Dissipation is 625 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Collector Emitter Voltage VCEO Max is 1.2 kV, and Collector Emitter Saturation Voltage is 3.3 V, and the Continuous Collector Current at 25 C is 100 A, and Gate Emitter Leakage Current is 100 nA, and the Maximum Gate Emitter Voltage is 30 V, and Continuous Collector Current Ic Max is 100 A.

The APT45GP120JDQ2 is IGBT 1200V 75A 329W SOT227, that includes Single Configuration, they are designed to operate with a 750μA Current Collector Cutoff Max, Current Collector Ic Max is shown on datasheet note for use in a 75A, that offers IGBT Type features such as PT, Input is designed to work in Standard, as well as the 4nF @ 25V Input Capacitance Cies Vce, the device can also be used as Chassis Mount Mounting Type. In addition, the NTC Thermistor is No, the device is offered in ISOTOP Package Case, the device has a Tube of Packaging, and Power Max is 329W, and the Series is POWER MOS 7R, and Supplier Device Package is ISOTOPR, and the Vce on Max Vge Ic is 3.9V @ 15V, 45A, and Voltage Collector Emitter Breakdown Max is 1200V.

Features

Tube Package
NPT IGBT Type
650 V Voltage - Collector Emitter Breakdown (Max)
92 A Current - Collector (Ic) (Max)
168 A Current - Collector Pulsed (Icm)
2.4V @ 15V, 45A Vce(on) (Max) @ Vge, Ic
357 W Power - Max
900µJ (on), 580µJ (off) Switching Energy
Standard Input Type
203 nC Gate Charge
15ns/100ns Td (on/off) @ 25°C
433V, 45A, 4.3Ohm, 15V Test Condition
Through Hole Mounting Type
产品属性
全选
包装: 管件
部件状态: 在售
IGBT 类型: NPT
最大集电极-发射极击穿电压: 650 V
集电极电流 (Ic)(最大值): 92 A
电流 - 集电极脉冲 (Icm): 168 A
栅极-发射极电压和集电极电流时的最大集电极-发射极导通电压: 2.4V @ 15V,45A
最大功率: 357 W
开关能量: 900µJ(开),580µJ(关)
输入类型: 标准
栅极电荷: 203 nC
25°C 时的开/关延迟时间: 15ns/100ns
测试条件: 433V,45A,4.3 欧姆,15V
安装类型: 通孔
封装/外壳: TO-247-3
供应商器件封装: TO-247
Microsemi Corporation

Microsemi Corporation

Microsemi Corporation是一家提供高性能半导体和系统解决方案的公司,专注于通信、国防与安全、航空和工业市场。公司成立于1959年,总部位于美国加利福尼亚州阿利索维耶荷。Microsemi于2018年被Microchip Technology收购。

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