Microsemi APT25GP90BG

900 V72 A370µJ（关）-55°C ~ 150°C（TJ）TO-247-3

Overview

APT25GP90B with pin details manufactured by APT. The APT25GP90B is available in MODULE Package, is part of the Module.

APT25GP90BDQ1G with circuit diagram manufactured by APT. The APT25GP90BDQ1G is available in MODULE Package, is part of the Module, IGBT PT 900V 72A 417W Through Hole TO-247 [B], Trans IGBT Chip N-CH 900V 72A 417000mW 3-Pin(3+Tab) TO-247, IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi.

Features

POWER MOS 7® Series
Tube Package
PT IGBT Type
900 V Voltage - Collector Emitter Breakdown (Max)
72 A Current - Collector (Ic) (Max)
110 A Current - Collector Pulsed (Icm)
3.9V @ 15V, 25A Vce(on) (Max) @ Vge, Ic
417 W Power - Max
370µJ (off) Switching Energy
Standard Input Type
110 nC Gate Charge
13ns/55ns Td (on/off) @ 25°C
600V, 25A, 5Ohm, 15V Test Condition
Through Hole Mounting Type