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2N4405

Microsemi 2N4405

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2N4405
TRANS PNP TO-39
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¥3.72

价格更新:一个月前

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产品详情

Overview

The 2N4403TF is TRANS PNP 40V 0.6A TO-92, that includes Cut Tape (CT) Alternate Packaging Packaging, they are designed to operate with a 0.008466 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Mounting Type is designed to work in Through Hole, as well as the TO-92-3 Supplier Device Package, the device can also be used as Single Configuration. In addition, the Power Max is 625mW, the device is offered in PNP Transistor Type, the device has a 600mA of Current Collector Ic Max, and Voltage Collector Emitter Breakdown Max is 40V, and the DC Current Gain hFE Min Ic Vce is 100 @ 150mA, 2V, and Vce Saturation Max Ib Ic is 750mV @ 50mA, 500mA, and the Frequency Transition is 200MHz, and Pd Power Dissipation is 625 mW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Collector Emitter Voltage VCEO Max is 40 V, and Transistor Polarity is PNP, and the Collector Emitter Saturation Voltage is 0.75 V, and Collector Base Voltage VCBO is 40 V, and the Emitter Base Voltage VEBO is 5 V, and Maximum DC Collector Current is 0.6 A, and the Gain Bandwidth Product fT is 200 MHz, and Continuous Collector Current is 0.6 A, and the DC Collector Base Gain hfe Min is 100, and DC Current Gain hFE Max is 300.

The 2N4403TAR is Bipolar Transistors - BJT PNP Transistor General Purpose, that includes 40 V Collector Base Voltage VCBO, they are designed to operate with a 0.75 V Collector Emitter Saturation Voltage, Collector Emitter Voltage VCEO Max is shown on datasheet note for use in a 40 V, that offers Configuration features such as Single, Continuous Collector Current is designed to work in 0.6 A, as well as the 100 DC Collector Base Gain hfe Min, the device can also be used as 300 DC Current Gain hFE Max. In addition, the Emitter Base Voltage VEBO is 5 V, the device is offered in 200 MHz Gain Bandwidth Product fT, the device has a 0.6 A of Maximum DC Collector Current, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Mounting Style is Through Hole, and the Package Case is TO-92-3 Kinked Lead, and Packaging is Ammo Pack, and the Pd Power Dissipation is 625 mW, and Transistor Polarity is PNP, and the Unit Weight is 0.008466 oz.

Features


a transition frequency of 200MHz

Bulk Package

Applications


There are a lot of Microsemi Corporation
2N4405 applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting
产品属性
全选
包装: 散装
部件状态: 停止提供
Microsemi Corporation

Microsemi Corporation

Microsemi Corporation是一家提供高性能半导体和系统解决方案的公司,专注于通信、国防与安全、航空和工业市场。公司成立于1959年,总部位于美国加利福尼亚州阿利索维耶荷。Microsemi于2018年被Microchip Technology收购。

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