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2N4403G

ON 2N4403G

PNP600 mA40 V

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onsemi
2N4403G
TRANS PNP 40V 0.6A TO92
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¥0.16

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产品详情

Overview

The 2N4403BU is TRANS PNP 40V 0.6A TO-92, that includes Bulk Packaging, they are designed to operate with a 2N4403BU_NL Part Aliases, Unit Weight is shown on datasheet note for use in a 0.006314 oz, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-226-3, TO-92-3 (TO-226AA), as well as the Through Hole Mounting Type, the device can also be used as TO-92-3 Supplier Device Package. In addition, the Configuration is Single, the device is offered in 625mW Power Max, the device has a PNP of Transistor Type, and Current Collector Ic Max is 600mA, and the Voltage Collector Emitter Breakdown Max is 40V, and DC Current Gain hFE Min Ic Vce is 100 @ 150mA, 2V, and the Vce Saturation Max Ib Ic is 750mV @ 50mA, 500mA, and Frequency Transition is 200MHz, and the Pd Power Dissipation is 625 mW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Collector Emitter Voltage VCEO Max is 40 V, and the Transistor Polarity is PNP, and Collector Emitter Saturation Voltage is 0.75 V, and the Collector Base Voltage VCBO is 40 V, and Emitter Base Voltage VEBO is 5 V, and the Maximum DC Collector Current is 0.6 A, and Gain Bandwidth Product fT is 200 MHz, and the Continuous Collector Current is 0.6 A, and DC Collector Base Gain hfe Min is 100, and the DC Current Gain hFE Max is 300.

2N4403/2N4401 with circuit diagram manufactured by FAIRCHILD. The 2N4403/2N4401 is available in TO-92 Package, is part of the IC Chips.

Features

Bulk Package
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 200MHz

Through Hole Mounting Type

Applications


There are a lot of ON Semiconductor
2N4403G applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting
产品属性
全选
包装: 散装
部件状态: 停产
晶体管类型: PNP
集电极电流 (Ic)(最大值): 600 mA
最大集电极-发射极击穿电压: 40 V
基极电流和集电极电流下的最大集电极-发射极饱和电压: 750mV @ 50mA,500mA
直流电流增益 (hFE) 最小值 @ Ic、Vce: 100 @ 150mA,2V
最大功率: 625 mW
频率 - 跃迁: 200MHz
工作温度: -55°C ~ 150°C(TJ)
安装类型: 通孔
封装/外壳: TO-226-3,TO-92-3 长体
供应商器件封装: TO-92(TO-226)
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