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1N3600

Microsemi 1N3600

标准50 V200mA

比较
1N3600
DIODE GEN PURP 50V 200MA DO35
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比较

¥2.10

价格更新:一个月前

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产品详情

Overview

The 1N3595TR is DIODE GEN PURP 150V 200MA DO35, that includes Cut Tape (CT) Alternate Packaging Packaging, they are designed to operate with a DO-204AH, DO-35, Axial Package Case, Mounting Type is shown on datasheet note for use in a Through Hole, that offers Supplier Device Package features such as DO-35, Speed is designed to work in Small Signal =, as well as the Standard Diode Type, the device can also be used as 1nA @ 125V Current Reverse Leakage Vr. In addition, the Voltage Forward Vf Max If is 1V @ 200mA, the device is offered in 150V Voltage DC Reverse Vr Max, the device has a 200mA of Current Average Rectified Io, and Reverse Recovery Time trr is 3μs, and the Capacitance Vr F is 8pF @ 0V, 1MHz, it has an Operating Temperature Junction range of 175°C (Max).

The 1N3595UR-1 is DIODE GEN PURP 125V 150MA DO213, that includes 150mA (DC) Current Average Rectified Io, they are designed to operate with a 1nA @ 125V Current Reverse Leakage Vr, Diode Type is shown on datasheet note for use in a Standard, that offers Mounting Type features such as Surface Mount, it has an Operating Temperature Junction range of -65°C ~ 175°C, as well as the DO-213AA Package Case, the device can also be used as Bulk Packaging. In addition, the Reverse Recovery Time trr is 3μs, the device is offered in Small Signal = Speed, the device has a DO-213AA of Supplier Device Package, and Voltage DC Reverse Vr Max is 125V, and the Voltage Forward Vf Max If is 1V @ 200mA.

Features

Bulk Package
an average rectified current of 200mA volts
the peak reverse is 100nA

Through Hole Mounting Type

Applications


There are a lot of Microsemi Corporation
1N3600 applications of single-phase diode rectifier.

  • DC motor control and drives
  • Battery chargers
  • Welders
  • Power converters
  • Reverse Polarity Protection
  • Ultra High-Speed Switching
  • Freewheeling
  • Polarity Protection Diode
  • Recirculating Diode
  • Switching Diode
产品属性
全选
包装: 散装
部件状态: 在售
技术: 标准
最大直流反向电压: 50 V
平均整流电流 (Io): 200mA
正向电流时的最大正向电压: 1 V @ 200 mA
速度: 小信号 =< 200mA(Io),任意速度
反向恢复时间 (trr): 4 ns
不同 Vr 时电流 - 反向泄漏: 100 nA @ 50 V
安装类型: 通孔
封装/外壳: DO-204AH,DO-35,轴向
供应商器件封装: DO-35
结点工作温度: -65°C ~ 175°C
Microsemi Corporation

Microsemi Corporation

Microsemi Corporation是一家提供高性能半导体和系统解决方案的公司,专注于通信、国防与安全、航空和工业市场。公司成立于1959年,总部位于美国加利福尼亚州阿利索维耶荷。Microsemi于2018年被Microchip Technology收购。

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