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1N3494

Microchip 1N3494

标准300 V35A

比较
1N3494
DIODE GEN PURP 300V 35A DO21
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比较

¥414.15

价格更新:一个月前

博斯克质量保证

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产品详情

Overview

The 1N3350B is DIODE ZENER 200V 50W DO5, that includes Bulk Packaging, they are designed to operate with a DO-203AB, DO-5, Stud Package Case, it has an Operating Temperature range of -65°C ~ 175°C, that offers Mounting Type features such as Chassis, Stud Mount, Supplier Device Package is designed to work in DO-5, as well as the ±5% Tolerance, the device can also be used as 50W Power Max. In addition, the Voltage Zener Nom Vz is 200V, the device is offered in 100 Ohm Impedance Max Zzt, the device has a 10μA @ 152V of Current Reverse Leakage Vr, and Voltage Forward Vf Max If is 1.5V @ 10A.

The 1N3477A is DIODE ZENER 2.2V 250MW DO-7, that includes Through Hole Mounting Type, they are designed to operate with a DO-7 Supplier Device Package, Package Case is shown on datasheet note for use in a DO-204AA, DO-7, Axial, that offers Packaging features such as Bulk, Power Max is designed to work in 250mW, as well as the 2.2V Voltage Zener Nom Vz, the device can also be used as ±5% Tolerance.

Features

Bulk Package
Standard Technology
300 V Voltage - DC Reverse (Vr) (Max)
35A Current - Average Rectified (Io)
1.1 V @ 35 A Voltage - Forward (Vf) (Max) @ If
Standard Recovery >500ns, > 200mA (Io) Speed
10 µA @ 300 V Current - Reverse Leakage @ Vr
Through Hole Mounting Type
产品属性
全选
包装: 散装
部件状态: 在售
技术: 标准
最大直流反向电压: 300 V
平均整流电流 (Io): 35A
正向电流时的最大正向电压: 1.1 V @ 35 A
速度: 标准恢复 >500ns,> 200mA(Io)
不同 Vr 时电流 - 反向泄漏: 10 µA @ 300 V
安装类型: 通孔
封装/外壳: DO-208AA
供应商器件封装: DO-21
结点工作温度: -65°C ~ 175°C
Microchip Technology

Microchip Technology

Microchip Technology是一家全球领先的半导体供应商,成立于1989年,总部位于美国亚利桑那州钱德勒。公司专注于提供微控制器、混合信号、模拟和闪存IP解决方案,服务于广泛的嵌入式控制应用市场。

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