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VN1206L-G

Microchip VN1206L-G

N 通道120 V230mA(Tj)2V @ 1mA1W(Tc)-55°C ~ 150°C(TJ)通孔

比较
VN1206L-G
MOSFET N-CH 120V 230MA TO92-3
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¥16.20

价格更新:一个月前

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产品详情

Overview

VN11A15000J0G with pin details, that includes Green Color, they are designed to operate with a Series, Packaging is shown on datasheet note for use in a Bulk, that offers Mounting Type features such as Through Hole, Current is designed to work in 6A, as well as the 150V Voltage, the device can also be used as 18-30 AWG Wire Gauge. In addition, the Pitch is 0.100" (2.54mm), the device is offered in 1 Number of Levels, the device has a 11 of Positions Per Level, and Mating Orientation is Horizontal with Board, and the Wire Termination is Screw - Rising Cage Clamp.

VN1206D with circuit diagram manufactured by SI. The VN1206D is available in TO220 Package, is part of the IC Chips.

Features

Bag Package
a continuous drain current (ID) of 230mA
a drain-to-source breakdown voltage of 120V voltage
the turn-off delay time is 18 ns

Through Hole Mounting Type

Applications


There are a lot of Microchip Technology
VN1206L-G applications of single MOSFETs transistors.

  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
产品属性
全选
包装: 袋
部件状态: 在售
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 120 V
25°C 时电流 - 连续漏极 (Id): 230mA(Tj)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 2.5V,10V
漏极电流和栅极至源极电压下的最大导通电阻: 6 欧姆 @ 500mA,10V
漏极电流下的最大栅极阈值电压: 2V @ 1mA
最大栅极源电压: ±30V
Vds 时的最大输入电容 (Ciss): 125 pF @ 25 V
最大功率耗散: 1W(Tc)
工作温度: -55°C ~ 150°C(TJ)
安装类型: 通孔
供应商器件封装: TO-92-3
封装/外壳: TO-226-3,TO-92-3 标准主体(!--TO-226AA)
Microchip Technology

Microchip Technology

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