Microchip DN2450N8-G

N 通道500 V230mA（Tj）1.6W（Ta）-55°C ~ 150°C（TJ）表面贴装型

Overview

These low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure andwell-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Features

Tape & Reel (TR) Package
a continuous drain current (ID) of 230mA
a drain-to-source breakdown voltage of 500V voltage
based on its rated peak drain current 0.9A.

Surface Mount Mounting Type

Applications

There are a lot of Microchip Technology
DN2450N8-G applications of single MOSFETs transistors.

• LCD/LED TV
• Consumer Appliances
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools