联系我们
中文
APTGL475U120DAG

Microchip APTGL475U120DAG

沟槽型场截止1200 V610 A2307 W-40°C ~ 175°C(TJ)

比较
APTGL475U120DAG
IGBT MODULE 1200V 610A 2307W SP6
paypalvisamastercarddiscover
upsdhlsf
比较

¥5060.00

价格更新:一个月前

博斯克质量保证

912ob9001 201514001 201545001 201813485 2016esdduns
产品详情

Overview

APTGL475DA120D3G with pin details, that includes D-3 Module Package Case, they are designed to operate with a Chassis Mount Mounting Type, Supplier Device Package is shown on datasheet note for use in a D3, that offers Input features such as Standard, Configuration is designed to work in Single, as well as the 2080W Power Max, the device can also be used as 610A Current Collector Ic Max. In addition, the Voltage Collector Emitter Breakdown Max is 1200V, the device is offered in 5mA Current Collector Cutoff Max, the device has a Trench Field Stop of IGBT Type, and Vce on Max Vge Ic is 2.2V @ 15V, 400A, and the Input Capacitance Cies Vce is 24.6nF @ 25V, and NTC Thermistor is No.

The APTGL475U120D4G is IGBT4 SGL SWITCH 1200V 610A D4, that includes Single Configuration, they are designed to operate with a 4mA Current Collector Cutoff Max, Current Collector Ic Max is shown on datasheet note for use in a 610A, that offers IGBT Type features such as Trench Field Stop, Input is designed to work in Standard, as well as the 24.6nF @ 25V Input Capacitance Cies Vce, the device can also be used as Chassis Mount Mounting Type. In addition, the NTC Thermistor is No, the device is offered in D4 Package Case, the device has a 2082W of Power Max, and Supplier Device Package is D4, and the Vce on Max Vge Ic is 2.2V @ 15V, 400A, and Voltage Collector Emitter Breakdown Max is 1200V.

Features

Bulk Package
Trench Field Stop IGBT Type
Single Configuration
1200 V Voltage - Collector Emitter Breakdown (Max)
610 A Current - Collector (Ic) (Max)
2307 W Power - Max
2.2V @ 15V, 400A Vce(on) (Max) @ Vge, Ic
4 mA Current - Collector Cutoff (Max)
24.6 nF @ 25 V Input Capacitance (Cies) @ Vce
Standard Input
No NTC Thermistor
Chassis Mount Mounting Type
SP6 Package / Case
SP6 Supplier Device Package
产品属性
全选
包装: 散装
部件状态: 在售
IGBT 类型: 沟槽型场截止
配置: 单路
最大集电极-发射极击穿电压: 1200 V
集电极电流 (Ic)(最大值): 610 A
最大功率: 2307 W
栅极-发射极电压和集电极电流时的最大集电极-发射极导通电压: 2.2V @ 15V,400A
电流 - 集电极截止(最大值): 4 mA
Vce 时的输入电容 (Cies): 24.6 nF @ 25 V
输入: 标准
NTC 热敏电阻: 无
工作温度: -40°C ~ 175°C(TJ)
安装类型: 底座安装
封装/外壳: SP6
供应商器件封装: SP6
Microchip Technology

Microchip Technology

Microchip Technology是一家全球领先的半导体供应商,成立于1989年,总部位于美国亚利桑那州钱德勒。公司专注于提供微控制器、混合信号、模拟和闪存IP解决方案,服务于广泛的嵌入式控制应用市场。

实时新闻

博斯克数字

收入: 85M

2022年的收入为8500万美元,与2021年增长63%。

国家: 105

博斯克服务全球105个国家的客户。

配件发货: 25M+

我们在过去的五年中发货了2.5亿个配件,比前五年增长148%。

制造商: 950

2022年,博斯克从近950个制造商售卖了配件。

所有产品零件号 0 - Z