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APT8024JLL

Microchip APT8024JLL

N 通道800 V29A(Tc)5V @ 2.5mA460W(Tc)-55°C ~ 150°C(TJ)底座安装

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APT8024JLL
MOSFET N-CH 800V 29A ISOTOP
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¥111.60

价格更新:一个月前

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产品详情

Overview

The APT8020JLL is Discrete Semiconductor Modules Power MOSFET - MOS7, that includes Power MOSFET Modules Product, they are designed to operate with a 1.058219 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Screw, that offers Tradename features such as POWER MOS 7 ISOTOP, Package Case is designed to work in SOT-227-4, as well as the Single Configuration, the device can also be used as 520 W Pd Power Dissipation. In addition, the Fall Time is 10 ns, the device is offered in 14 ns Rise Time, the device has a 30 V of Vgs Gate Source Voltage, and Id Continuous Drain Current is 33 A, and the Vds Drain Source Breakdown Voltage is 800 V, and Vgs th Gate Source Threshold Voltage is 3 V, and the Rds On Drain Source Resistance is 200 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 39 ns, and Typical Turn On Delay Time is 12 ns.

APT8020LLL with circuit diagram manufactured by APT. The APT8020LLL is available in TO264 Package, is part of the IC Chips.

Features

POWER MOS 7® Series
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 29A
the turn-off delay time is 23 ns

ISOTOP® Supplier Device Package

Applications


There are a lot of Microsemi Corporation
APT8024JLL applications of single MOSFETs transistors.

  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
产品属性
全选
型号系列: POWER MOS 7®
包装: 管件
部件状态: 停产
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 800 V
25°C 时电流 - 连续漏极 (Id): 29A(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 10V
漏极电流和栅极至源极电压下的最大导通电阻: 240 毫欧 @ 14.5A,10V
漏极电流下的最大栅极阈值电压: 5V @ 2.5mA
最大栅极电荷 (Qg) @ Vgs: 160 nC @ 10 V
最大栅极源电压: ±30V
Vds 时的最大输入电容 (Ciss): 4670 pF @ 25 V
最大功率耗散: 460W(Tc)
工作温度: -55°C ~ 150°C(TJ)
安装类型: 底座安装
供应商器件封装: ISOTOP®
封装/外壳: SOT-227-4,miniBLOC
Microchip Technology

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