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APT30F50B

Microchip APT30F50B

N 通道500 V30A(Tc)5V @ 1mA415W(Tc)-55°C ~ 150°C(TJ)通孔

比较
APT30F50B
MOSFET N-CH 500V 30A TO247
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比较

¥36.36

价格更新:一个月前

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产品详情

Overview

APT30DS20HJ with pin details, that includes Bulk Packaging, they are designed to operate with a SOT-227-4, miniBLOC Package Case, Mounting Type is shown on datasheet note for use in a Chassis, Stud Mount, that offers Supplier Device Package features such as SOT-227, Diode Type is designed to work in Single Phase, Schottky, as well as the 200V Voltage Peak Reverse Max, the device can also be used as 45A Current DC Forward If Max.

APT30DS60BX with circuit diagram manufactured by APT. The APT30DS60BX is available in TO-247-2 Package, is part of the IC Chips.

Features

POWER MOS 8™ Series
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 90A.

Through Hole Mounting Type

Applications


There are a lot of Microsemi Corporation
APT30F50B applications of single MOSFETs transistors.

  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
产品属性
全选
型号系列: POWER MOS 8™
包装: 管件
部件状态: 在售
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 500 V
25°C 时电流 - 连续漏极 (Id): 30A(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 10V
漏极电流和栅极至源极电压下的最大导通电阻: 190 毫欧 @ 14A,10V
漏极电流下的最大栅极阈值电压: 5V @ 1mA
最大栅极电荷 (Qg) @ Vgs: 115 nC @ 10 V
最大栅极源电压: ±30V
Vds 时的最大输入电容 (Ciss): 4525 pF @ 25 V
最大功率耗散: 415W(Tc)
工作温度: -55°C ~ 150°C(TJ)
安装类型: 通孔
供应商器件封装: TO-247 [B]
封装/外壳: TO-247-3
Microchip Technology

Microchip Technology

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