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2N6385

Microchip 2N6385

NPN - 达林顿10 A80 V

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2N6385
TRANS NPN DARL 80V 10A TO204AA
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¥3.06

价格更新:一个月前

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产品详情

Overview

The 2N6384 is TRANS NPN DARL 60V 10A TO-3, that includes 2N6384 Series, they are designed to operate with a Tube Packaging, Unit Weight is shown on datasheet note for use in a 0.225789 oz, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-3, as well as the 100 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 200 C, it has an Minimum Operating Temperature range of - 65 C, the device is offered in 60 V Collector Emitter Voltage VCEO Max, the device has a NPN of Transistor Polarity, and Collector Emitter Saturation Voltage is 3 V, and the Collector Base Voltage VCBO is 60 V, and Emitter Base Voltage VEBO is 5 V, and the Maximum DC Collector Current is 15 A, and Continuous Collector Current is 0.45 A, and the DC Collector Base Gain hfe Min is 100 at 10 A 3 V, and DC Current Gain hFE Max is 100.

The 2N6383 is Darlington Transistors NPN Darlington Transistor manufactured by ON. The 2N6383 is available in TO-3 Package, is part of the Transistors (BJT) - Single, , and with support for Darlington Transistors NPN Darlington Transistor, Bipolar (BJT) Transistor.

Features

Bulk Package
10 A Current - Collector (Ic) (Max)
80 V Voltage - Collector Emitter Breakdown (Max)
3V @ 100mA, 10A Vce Saturation (Max) @ Ib, Ic
1mA (ICBO) Current - Collector Cutoff (Max)
1000 @ 5A, 3V DC Current Gain (hFE) (Min) @ Ic, Vce
6 W Power - Max
Through Hole Mounting Type
产品属性
全选
包装: 散装
部件状态: 在售
晶体管类型: NPN - 达林顿
集电极电流 (Ic)(最大值): 10 A
最大集电极-发射极击穿电压: 80 V
基极电流和集电极电流下的最大集电极-发射极饱和电压: 3V @ 100mA,10A
电流 - 集电极截止(最大值): 1mA(ICBO)
直流电流增益 (hFE) 最小值 @ Ic、Vce: 1000 @ 5A,3V
最大功率: 6 W
工作温度: -55°C ~ 175°C(TJ)
安装类型: 通孔
封装/外壳: TO-204AA,TO-3
供应商器件封装: TO-204AA(TO-3)
Microchip Technology

Microchip Technology

Microchip Technology是一家全球领先的半导体供应商,成立于1989年,总部位于美国亚利桑那州钱德勒。公司专注于提供微控制器、混合信号、模拟和闪存IP解决方案,服务于广泛的嵌入式控制应用市场。

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