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2N6294

Microchip 2N6294

NPN - 达林顿4 A60 V

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2N6294
POWER BJT
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¥4.16

价格更新:一个月前

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产品详情

Overview

The 2N6290 is TRANS NPN 50V 7A TO-220, that includes 2N6290 Series, they are designed to operate with a Tube Packaging, Part Aliases is shown on datasheet note for use in a BK, that offers Unit Weight features such as 0.211644 oz, Mounting Style is designed to work in Through Hole, as well as the TO-220-3 Package Case, the device can also be used as Through Hole Mounting Type. In addition, the Supplier Device Package is TO-220, the device is offered in Single Configuration, the device has a 40W of Power Max, and Transistor Type is NPN, and the Current Collector Ic Max is 7A, and Voltage Collector Emitter Breakdown Max is 50V, and the DC Current Gain hFE Min Ic Vce is 30 @ 2.5A, 4V, and Vce Saturation Max Ib Ic is 3.5V @ 3A, 7A, and the Current Collector Cutoff Max is 1mA, and Frequency Transition is 4MHz, and the Pd Power Dissipation is 40 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 65 C, and Collector Emitter Voltage VCEO Max is 50 V, and the Transistor Polarity is NPN, and Collector Emitter Saturation Voltage is 3.5 V, and the Collector Base Voltage VCBO is 60 V, and Emitter Base Voltage VEBO is 5 V, and the Maximum DC Collector Current is 7 A, and Gain Bandwidth Product fT is 4 MHz, and the Continuous Collector Current is 0.45 A, and DC Collector Base Gain hfe Min is 30.

The 2N6292G is Bipolar Transistors - BJT 7A 70V 40W NPN, that includes Tube Packaging, they are designed to operate with a TO-220-3 Package Case, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Configuration features such as Single, Transistor Polarity is designed to work in NPN, as well as the 80 V Collector Base Voltage VCBO, the device can also be used as 70 V Collector Emitter Voltage VCEO Max. In addition, the Maximum DC Collector Current is 7 A, the device is offered in 7 A Continuous Collector Current, the device has a 5 V of Emitter Base Voltage VEBO, and Pd Power Dissipation is 40 W, and the Gain Bandwidth Product fT is 4 MHz, and DC Collector Base Gain hfe Min is 30, and the Collector Emitter Saturation Voltage is 3.5 V, and Series is 2N6292, and the Unit Weight is 0.211644 oz, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 65 C.

Features

Bulk Package
4 A Current - Collector (Ic) (Max)
60 V Voltage - Collector Emitter Breakdown (Max)
3V @ 40mA, 4A Vce Saturation (Max) @ Ib, Ic
500µA Current - Collector Cutoff (Max)
750 @ 2A, 3V DC Current Gain (hFE) (Min) @ Ic, Vce
50 W Power - Max
Through Hole Mounting Type
产品属性
全选
包装: 散装
部件状态: 在售
晶体管类型: NPN - 达林顿
集电极电流 (Ic)(最大值): 4 A
最大集电极-发射极击穿电压: 60 V
基极电流和集电极电流下的最大集电极-发射极饱和电压: 3V @ 40mA,4A
电流 - 集电极截止(最大值): 500µA
直流电流增益 (hFE) 最小值 @ Ic、Vce: 750 @ 2A,3V
最大功率: 50 W
工作温度: -65°C ~ 200°C(TJ)
安装类型: 通孔
封装/外壳: TO-213AA,TO-66-2
供应商器件封装: TO-66(TO-213AA)
Microchip Technology

Microchip Technology

Microchip Technology是一家全球领先的半导体供应商,成立于1989年,总部位于美国亚利桑那州钱德勒。公司专注于提供微控制器、混合信号、模拟和闪存IP解决方案,服务于广泛的嵌入式控制应用市场。

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