Microchip 2N6033

NPN40 A120 V

Overview

The 2N6029 is Bipolar Transistors - BJT PNP Gen Pur Pwr, that includes 2N6029 Series, they are designed to operate with a Tube Packaging, Unit Weight is shown on datasheet note for use in a 0.225789 oz, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-3, as well as the 200 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 60 C, the device is offered in 100 V Collector Emitter Voltage VCEO Max, the device has a PNP of Transistor Polarity, and Collector Emitter Saturation Voltage is 2 V, and the Collector Base Voltage VCBO is 100 V, and Emitter Base Voltage VEBO is 7 V, and the Maximum DC Collector Current is 16 A, and Gain Bandwidth Product fT is 1 MHz, and the Continuous Collector Current is 16 A, and DC Collector Base Gain hfe Min is 25.

2N6032 with EDA / CAD Models manufactured by MOT. The 2N6032 is available in TO-3 Package, is part of the IC Chips.

Features

Bulk Package
NPN Transistor Type
40 A Current - Collector (Ic) (Max)
120 V Voltage - Collector Emitter Breakdown (Max)
1V @ 4A, 40A Vce Saturation (Max) @ Ib, Ic
10mA Current - Collector Cutoff (Max)
10 @ 40A, 2V DC Current Gain (hFE) (Min) @ Ic, Vce
140 W Power - Max
Through Hole Mounting Type