Microchip 2N6031

PNP16 A140 V

Overview

The 2N6029 is Bipolar Transistors - BJT PNP Gen Pur Pwr, that includes 2N6029 Series, they are designed to operate with a Tube Packaging, Unit Weight is shown on datasheet note for use in a 0.225789 oz, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-3, as well as the 200 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 60 C, the device is offered in 100 V Collector Emitter Voltage VCEO Max, the device has a PNP of Transistor Polarity, and Collector Emitter Saturation Voltage is 2 V, and the Collector Base Voltage VCBO is 100 V, and Emitter Base Voltage VEBO is 7 V, and the Maximum DC Collector Current is 16 A, and Gain Bandwidth Product fT is 1 MHz, and the Continuous Collector Current is 16 A, and DC Collector Base Gain hfe Min is 25.

The 2N6028RLRPG is THYRISTOR PROG UNIJUNCT 40V TO92, that includes 10nA Current Gate to Anode Leakage Igao, they are designed to operate with a 150nA Current Peak, Current Valley Iv is shown on datasheet note for use in a 25μA, that offers Package Case features such as TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Power Dissipation Max is designed to work in 300mW, as well as the 40V Voltage, the device can also be used as 600mV Voltage Offset Vt. In addition, the Voltage Output is 11V.

Features

Bulk Package
PNP Transistor Type
16 A Current - Collector (Ic) (Max)
140 V Voltage - Collector Emitter Breakdown (Max)
200 W Power - Max
Through Hole Mounting Type