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2N5330

Microchip 2N5330

PNP20 A90 V

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2N5330
POWER BJT
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¥118.80

价格更新:一个月前

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产品详情

Overview

The 2N5322 is TRANS PNP 75V 2A TO-39, that includes 2N5322 Series, they are designed to operate with a Bulk Packaging, Part Aliases is shown on datasheet note for use in a BK, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-205AD, TO-39-3 Metal Can, as well as the Through Hole Mounting Type, the device can also be used as TO-39 Supplier Device Package. In addition, the Power Max is 10W, the device is offered in PNP Transistor Type, the device has a 2A of Current Collector Ic Max, and Voltage Collector Emitter Breakdown Max is 75V, and the DC Current Gain hFE Min Ic Vce is 30 @ 500mA, 4V, and Vce Saturation Max Ib Ic is 700mV @ 50mA, 500mA, and the Current Collector Cutoff Max is 500nA (ICBO), and Frequency Transition is 50MHz, and the Pd Power Dissipation is 10000 mW, it has an Maximum Operating Temperature range of + 200 C, it has an Minimum Operating Temperature range of - 65 C, and Collector Emitter Voltage VCEO Max is 75 V, and the Transistor Polarity is PNP, and Collector Emitter Saturation Voltage is 700 mV, and the Collector Base Voltage VCBO is 100 V, and Emitter Base Voltage VEBO is 6 V, and the Maximum DC Collector Current is 2 A, and Gain Bandwidth Product fT is 50 MHz, and the DC Collector Base Gain hfe Min is 10 at 1 A 2 V.

The 2N5323 is Bipolar Transistors - BJT . ., that includes Tray Packaging, they are designed to operate with a 2N5323 Series.

Features

Bulk Package
PNP Transistor Type
20 A Current - Collector (Ic) (Max)
90 V Voltage - Collector Emitter Breakdown (Max)
1.8V @ 2mA, 10mA Vce Saturation (Max) @ Ib, Ic
140 W Power - Max
Stud Mount Mounting Type
产品属性
全选
包装: 散装
部件状态: 在售
晶体管类型: PNP
集电极电流 (Ic)(最大值): 20 A
最大集电极-发射极击穿电压: 90 V
基极电流和集电极电流下的最大集电极-发射极饱和电压: 1.8V @ 2mA, 10mA
最大功率: 140 W
工作温度: -65°C ~ 200°C(TJ)
安装类型: 接线柱安装
封装/外壳: TO-211MA,TO-210AC,TO-61-4,接线柱
供应商器件封装: TO-61
Microchip Technology

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