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2N4393

Microchip 2N4393

40 V100 Ohms

比较
2N4393
JFET N-CH 40V TO18
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¥15.60

价格更新:一个月前

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产品详情

Overview

The 2N4392-2 is MOSFET N-CH 40V .1NA TO-18, that includes Bulk Packaging, they are designed to operate with a SMD/SMT Mounting Style, Package Case is shown on datasheet note for use in a TO-206AA, TO-18-3 Metal Can, that offers Mounting Type features such as Through Hole, Supplier Device Package is designed to work in TO-206AA (TO-18), as well as the Single Configuration, the device can also be used as N-Channel FET Type. In addition, the Power Max is 1.8W, the device is offered in 40V Voltage Breakdown V BRGSS, the device has a 25mA @ 20V of Current Drain Idss Vds Vgs=0, and Voltage Cutoff VGS off Id is 2V @ 1nA, and the Input Capacitance Ciss Vds is 14pF @ 20V, and Resistance RDS On is 60 Ohm, and the Transistor Polarity is N-Channel, and Vgs Gate Source Breakdown Voltage is - 40 V.

2N4392UB with circuit diagram manufactured by Microsemi. is part of the JFETs (Junction Field Effect), , and with support for JFET N Channel Jfet, JFET.

Features

Bulk Package
40 V Voltage - Breakdown (V(BR)GSS)
5 mA @ 20 V Current - Drain (Idss) @ Vds (Vgs=0)
500 mV @ 1 nA Voltage - Cutoff (VGS off) @ Id
14pF @ 20V Input Capacitance (Ciss) (Max) @ Vds
100 Ohms Resistance - RDS(On)
1.8 W Power - Max
Through Hole Mounting Type
产品属性
全选
包装: 散装
部件状态: 在售
FET 类型: N 通道
击穿电压(栅极-源极-源极): 40 V
不同 Vds (Vgs=0) 时电流 - 漏极 (Idss): 5 mA @ 20 V
栅极-源极关态电压和漏极电流时的截止电压: 500 mV @ 1 nA
Vds 时的最大输入电容 (Ciss): 14pF @ 20V
国内抵制: 100 Ohms
最大功率: 1.8 W
工作温度: -55°C ~ 125°C(TJ)
安装类型: 通孔
供应商器件封装: TO-18
Microchip Technology

Microchip Technology

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