Microchip 1N5822G

肖特基

Overview

This ON Semiconductor Schottky power rectifier employs the Schottky barrier principle using a barrier metal to create the best forward voltage drop−reverse current exchange. Suitable for low voltage, high-frequency rectification as well as a freewheeling and polarity protection diode in a range of surface mount applications wherever a more compact size and weight are key.

Products with NSV-, SBR- or S-prefixed Manufacturer Part Nos are AEC-Q101 automotive qualified.

Features

Bulk Package
a maximal reverse leakage current of 2mA volts
an average rectified current of 3A volts
a current rating of 3A
the peak reverse is 2mA
the breakdown voltage of a diode is 40V

B Supplier Device Package

Applications

There are a lot of ON Semiconductor
1N5822G applications of single-phase diode rectifier.

• DC motor control and drives
• Battery chargers
• Welders
• Power converters
• Reverse Polarity Protection
• Ultra High-Speed Switching
• Freewheeling
• Polarity Protection Diode
• Recirculating Diode
• Switching Diode