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1N5332

Microchip 1N5332

标准1200 V35A

比较
1N5332
DIODE GEN PURP 1.2KV 35A DO5
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¥4.50

价格更新:一个月前

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产品详情

Overview

The 1N5331 is DIODE GEN PURP 1.4KV 22A DO4, that includes Bulk Packaging, they are designed to operate with a DO-203AA, DO-4, Stud Package Case, Mounting Type is shown on datasheet note for use in a Chassis, Stud Mount, that offers Supplier Device Package features such as DO-4, Speed is designed to work in Standard Recovery >500ns, > 200mA (Io), as well as the Standard Diode Type, the device can also be used as 10μA @ 1400V Current Reverse Leakage Vr. In addition, the Voltage Forward Vf Max If is 1.2V @ 30A, the device is offered in 1400V (1.4kV) Voltage DC Reverse Vr Max, the device has a 22A of Current Average Rectified Io, it has an Operating Temperature Junction range of -65°C ~ 200°C.

1N5314UR-1 with EDA / CAD Models manufactured by Microsemi. is part of the Diodes - Zener - Single, , and with support for Zener Diodes Current Limiter Diode, Diode.

Features

Bulk Package
Standard Technology
1200 V Voltage - DC Reverse (Vr) (Max)
35A Current - Average Rectified (Io)
1.19 V @ 90 A Voltage - Forward (Vf) (Max) @ If
Standard Recovery >500ns, > 200mA (Io) Speed
5 µs Reverse Recovery Time (trr)
2 µA @ 1200 V Current - Reverse Leakage @ Vr
Stud Mount Mounting Type
产品属性
全选
包装: 散装
部件状态: 在售
技术: 标准
最大直流反向电压: 1200 V
平均整流电流 (Io): 35A
正向电流时的最大正向电压: 1.19 V @ 90 A
速度: 标准恢复 >500ns,> 200mA(Io)
反向恢复时间 (trr): 5 µs
不同 Vr 时电流 - 反向泄漏: 2 µA @ 1200 V
安装类型: 接线柱安装
封装/外壳: DO-203AB,DO-5,接线柱
供应商器件封装: DO-5(DO-203AB)
结点工作温度: -65°C ~ 200°C
Microchip Technology

Microchip Technology

Microchip Technology是一家全球领先的半导体供应商,成立于1989年,总部位于美国亚利桑那州钱德勒。公司专注于提供微控制器、混合信号、模拟和闪存IP解决方案,服务于广泛的嵌入式控制应用市场。

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