Infineon IRLML5103TR

P 通道30 V760mA（Ta）1V @ 250µA表面贴装型

Overview

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in wide variety of applications.

• Generation V Technology• Ultra Low On-Resistance• P-Channel MOSFET• SOT-23 Footprint• Low Profile (<1.1mm)• Available in Tape and Reel• Fast Switching

Features

• Advanced process technology

• Dynamic dv/dt rating

• Fast switching

• Fully avalanche rated

Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial