
Infineon IRLL024Z
N 通道55 V5A(Tc)3V @ 250µA1W(Ta)-55°C ~ 150°C(TJ)表面贴装型
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¥0.81
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Overview
The IRLL024NPBF is MOSFET N-CH 55V 3.1A SOT223, that includes Tube Packaging, they are designed to operate with a 0.006632 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as SOT-223-4, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Dual Drain Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 2.1 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 25 ns, and Rise Time is 21 ns, and the Vgs Gate Source Voltage is 16 V, and Id Continuous Drain Current is 4.4 A, and the Vds Drain Source Breakdown Voltage is 55 V, and Rds On Drain Source Resistance is 100 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 18 ns, and the Typical Turn On Delay Time is 7.4 ns, and Qg Gate Charge is 10.4 nC, and the Channel Mode is Enhancement.
The IRLL024NTRPBF is MOSFET N-CH 55V 3.1A SOT223, that includes 4.4 A Id Continuous Drain Current, they are designed to operate with a SMD/SMT Mounting Style, Number of Channels is shown on datasheet note for use in a 1 Channel, that offers Package Case features such as SOT-223-4, Packaging is designed to work in Reel, as well as the 2.1 W Pd Power Dissipation, the device can also be used as 10.4 nC Qg Gate Charge. In addition, the Rds On Drain Source Resistance is 100 mOhms, the device is offered in Si Technology, the device has a N-Channel of Transistor Polarity, and Transistor Type is 1 N-Channel, and the Unit Weight is 0.006632 oz, and Vds Drain Source Breakdown Voltage is 55 V, and the Vgs Gate Source Voltage is 16 V.
Features
HEXFET® SeriesAdvanced Process Technology
Ultra Low On-Resistance
150°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Non-RoHS Compliant
Applications
Switching Applications
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid
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Infineon Technologies
Infineon Technologies是一家全球领先的半导体公司,成立于1999年,总部位于德国慕尼黑。公司专注于提供高性能的功率半导体、传感器和微控制器解决方案,服务于汽车、工业、电源管理和物联网等领域。
热门零件号
实时新闻
博斯克数字
收入: 85M
2022年的收入为8500万美元,与2021年增长63%。
国家: 105
博斯克服务全球105个国家的客户。
配件发货: 25M+
我们在过去的五年中发货了2.5亿个配件,比前五年增长148%。
制造商: 950
2022年,博斯克从近950个制造商售卖了配件。
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