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IRLL024Z

Infineon IRLL024Z

N 通道55 V5A(Tc)3V @ 250µA1W(Ta)-55°C ~ 150°C(TJ)表面贴装型

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IRLL024Z
MOSFET N-CH 55V 5A SOT223
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¥0.81

价格更新:一个月前

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产品详情

Overview

The IRLL024NPBF is MOSFET N-CH 55V 3.1A SOT223, that includes Tube Packaging, they are designed to operate with a 0.006632 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as SOT-223-4, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Dual Drain Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 2.1 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 25 ns, and Rise Time is 21 ns, and the Vgs Gate Source Voltage is 16 V, and Id Continuous Drain Current is 4.4 A, and the Vds Drain Source Breakdown Voltage is 55 V, and Rds On Drain Source Resistance is 100 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 18 ns, and the Typical Turn On Delay Time is 7.4 ns, and Qg Gate Charge is 10.4 nC, and the Channel Mode is Enhancement.

The IRLL024NTRPBF is MOSFET N-CH 55V 3.1A SOT223, that includes 4.4 A Id Continuous Drain Current, they are designed to operate with a SMD/SMT Mounting Style, Number of Channels is shown on datasheet note for use in a 1 Channel, that offers Package Case features such as SOT-223-4, Packaging is designed to work in Reel, as well as the 2.1 W Pd Power Dissipation, the device can also be used as 10.4 nC Qg Gate Charge. In addition, the Rds On Drain Source Resistance is 100 mOhms, the device is offered in Si Technology, the device has a N-Channel of Transistor Polarity, and Transistor Type is 1 N-Channel, and the Unit Weight is 0.006632 oz, and Vds Drain Source Breakdown Voltage is 55 V, and the Vgs Gate Source Voltage is 16 V.

Features

HEXFET® Series


  • Advanced Process Technology

  • Ultra Low On-Resistance

  • 150°C Operating Temperature

  • Fast Switching

  • Repetitive Avalanche Allowed up to Tjmax

  • Lead-Free

  • Non-RoHS Compliant



Surface Mount Mounting Type

Applications


  • Switching Applications

  • New Energy Vehicle

  • Photovoltaic Generation

  • Wind Power Generation

  • Smart Grid


产品属性
全选
型号系列: HEXFET®
包装: 管件
部件状态: 停产
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 55 V
25°C 时电流 - 连续漏极 (Id): 5A(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 4.5V,10V
漏极电流和栅极至源极电压下的最大导通电阻: 60 毫欧 @ 3A,10V
漏极电流下的最大栅极阈值电压: 3V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 11 nC @ 5 V
最大栅极源电压: ±16V
Vds 时的最大输入电容 (Ciss): 380 pF @ 25 V
最大功率耗散: 1W(Ta)
工作温度: -55°C ~ 150°C(TJ)
安装类型: 表面贴装型
供应商器件封装: SOT-223
封装/外壳: TO-261-4,TO-261AA
Infineon Technologies

Infineon Technologies

Infineon Technologies是一家全球领先的半导体公司,成立于1999年,总部位于德国慕尼黑。公司专注于提供高性能的功率半导体、传感器和微控制器解决方案,服务于汽车、工业、电源管理和物联网等领域。

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