Infineon IRFU9120N

P 通道100 V6.6A（Tc）4V @ 250µA40W（Tc）-55°C ~ 175°C（TJ）通孔

Overview

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

● Ultra Low On-Resistance ● P-Channel ● Surface Mount (IRFR9120N) ● Straight Lead (IRFU9120N) ● Advanced Process Technology ● Fast Switching ● Fully Avalanche Rated

Features

HEXFET® Series
the avalanche energy rating (Eas) is 100 mJ
based on its rated peak drain current 26A.
a 100V drain to source voltage (Vdss)

Through Hole Mounting Type

Applications

There are a lot of Infineon Technologies
IRFU9120N applications of single MOSFETs transistors.

• Consumer Appliances
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples