Infineon IRF7507TRPBF

MOSFET（金属氧化物）逻辑电平门N 和 P 沟道20V2.4A，1.7A140 毫欧 @ 1.7A，4.5V700mV @ 250µA

Overview

Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.

Features

 Generation V Technology

 Ultra Low On-Resistance

 Dual N and P Channel MOSFET

 Very Small SOIC Package

 Low Profile (<1.1mm)

 Available in Tape & Reel

 Fast Switching

Applications

limited space on printed circuit boards