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IR2127

Infineon IR2127

高压侧或低压侧112V ~ 20V

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IR2127
IC GATE DRV HI-SIDE/LO-SIDE 8DIP
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产品详情

Overview

Description The IR2127/IR2128/IR21271(S) is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL outputs, down to 3.3V. The protection circuity detects over-current in the driven power transistor and terminates the gate drive voltage. An open drain FAULTsignal is provided to indicate that an over-current shutdown has occurred. The output driver features a high pulse currentbuffer stage designed for minimum cross-conduction.The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side or low side configuration which operates up to 600 volts.

Features •Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune •Application- specific gate drive range: Motor Drive: 12 to 20V (IR2127/IR2128) Automotive: 9 to 20V (IR21271) •Undervoltage lockout •3.3V, 5V and 15V input logic compatible • FAULTlead indicates shutdown has occured •Output in phase with input (IR2127/IR21271) •Output out of phase with input (IR2128) • Avaliable in Lead-Free

Features

Tube Package


  • FAULT lead indicates shutdown has occurred

  • Output in phase with the input

  • Available in Lead-Free

  • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune

  • Application-specific gate drive range:

  • Motor Drive: 12 to 20V

  • Undervoltage lockout

  • 3.3V, 5V and 15V input logic compatible



Through Hole Mounting Type

Applications


  • Switch Mode Power Supplies (SMPS)

  • Power-Over-Ethernet (PoE)

  • Solar Inverters

  • Automotive Applications

  • Switch, Buck and Synchronous Rectification

  • Uninterruptible Power Supplies (UPS)

  • Small Motor Control


产品属性
全选
包装: 管件
部件状态: 停产
可编程: 未验证
驱动配置: 高压侧或低压侧
通道类型: 单路
驱动器数: 1
栅极类型: IGBT,N 沟道 MOSFET
电源电压: 12V ~ 20V
逻辑低电平和高电平的电压电平: 0.8V,3V
电流 - 峰值输出(灌入,拉出): 250mA,500mA
输入类型: 非反相
最大高压侧电压(自启动): 600 V
上升/下降时间(典型值): 80ns,40ns
工作温度: -40°C ~ 150°C(TJ)
安装类型: 通孔
封装/外壳: 8-DIP(0.300",7.62mm)
供应商器件封装: 8-PDIP
Infineon Technologies

Infineon Technologies

Infineon Technologies是一家全球领先的半导体公司,成立于1999年,总部位于德国慕尼黑。公司专注于提供高性能的功率半导体、传感器和微控制器解决方案,服务于汽车、工业、电源管理和物联网等领域。

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