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IR2125

Infineon IR2125

高端10V ~ 18V

比较
IR2125
IC GATE DRVR HIGH-SIDE 8DIP
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比较

¥8.93

价格更新:一个月前

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产品详情

Overview

Description The IR2125(S) is a high voltage, high speed power MOSFET and IGBT driver with over-current limiting protection circuitry. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs, down to 2.5V logic. The output driver features a high pulse currentbuffer stage designed for minimum driver cross-conduction. The protection circuitry detects over-current in the driven power transistor and limits the gate drive voltage. Cycle by cycle shutdown is programmed by an external capacitor which directly controls the time interval between detection of the over-current limiting conditions and latched shutdown. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high or low side configuration which operates up to 500 volts.

Features • Floating channel designed for bootstrap operation Fully operational to +500V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 12 to 18V • Undervoltage lockout • Current detection and limiting loop to limit driven power transistor current • Error lead indicates fault conditions and programs shutdown time • Output in phase with input • 2.5V, 5V and 15V input logic compatible • Also available LEAD-Free

Features

Tube Package
Embedded in the Tube package
1 drivers
Employing a gate type of IGBT, N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 500V
FLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUIT

Through Hole Mounting Type

Applications


There are a lot of Infineon Technologies
IR2125 gate drivers applications.

  • Head-up and Head mounted displays
  • High current laser/LED systems
  • LCD/LCoS/DLP portable and embedded pico projectors
  • Multicolor LED/laser displays
  • Smart Phones
  • Portable Navigation Devices
  • Portable Media Players
  • Motor Controls
  • DC-DC Converters
  • AC-DC Inverters
产品属性
全选
包装: 管件
部件状态: 停产
可编程: 未验证
驱动配置: 高端
通道类型: 单路
驱动器数: 1
栅极类型: IGBT,N 沟道 MOSFET
电源电压: 0V ~ 18V
逻辑低电平和高电平的电压电平: 0.8V,2.2V
电流 - 峰值输出(灌入,拉出): 1.6A,3.3A
输入类型: 非反相
最大高压侧电压(自启动): 500 V
上升/下降时间(典型值): 43ns,26ns
工作温度: -40°C ~ 150°C(TJ)
安装类型: 通孔
封装/外壳: 8-DIP(0.300",7.62mm)
供应商器件封装: 8-PDIP
Infineon Technologies

Infineon Technologies

Infineon Technologies是一家全球领先的半导体公司,成立于1999年,总部位于德国慕尼黑。公司专注于提供高性能的功率半导体、传感器和微控制器解决方案,服务于汽车、工业、电源管理和物联网等领域。

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