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IR2113

Infineon IR2113

半桥23.3V ~ 20V

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IR2113
IC GATE DRVR HALF-BRIDGE 14DIP
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¥6.06

价格更新:一个月前

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产品详情

Overview

The IR2113 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

The IR2113 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

Features

Tube Package
Independent Channel Type
2 Number of Drivers
3.3V ~ 20V Voltage - Supply
6V, 9.5V Logic Voltage - VIL, VIH
2A, 2A Current - Peak Output (Source, Sink)
600 V High Side Voltage - Max (Bootstrap)
25ns, 17ns Rise / Fall Time (Typ)
Through Hole Mounting Type
产品属性
全选
包装: 管件
部件状态: 停产
可编程: 未验证
驱动配置: 半桥
通道类型: 独立式
驱动器数: 2
栅极类型: IGBT,N 沟道 MOSFET
电源电压: 3.3V ~ 20V
逻辑低电平和高电平的电压电平: 6V,9.5V
电流 - 峰值输出(灌入,拉出): 2A,2A
输入类型: 非反相
最大高压侧电压(自启动): 600 V
上升/下降时间(典型值): 25ns,17ns
工作温度: -40°C ~ 150°C(TJ)
安装类型: 通孔
封装/外壳: 14-DIP(0.300",7.62mm)
供应商器件封装: 14-DIP
Infineon Technologies

Infineon Technologies

Infineon Technologies是一家全球领先的半导体公司,成立于1999年,总部位于德国慕尼黑。公司专注于提供高性能的功率半导体、传感器和微控制器解决方案,服务于汽车、工业、电源管理和物联网等领域。

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