Infineon IPW65R310CFD

N 通道650 V11.4A（Tc）4.5V @ 440µA104.2W（Tc）-55°C ~ 150°C（TJ）通孔

Overview

The IPW65R190E6 is MOSFET N-Ch 700V 20.2A TO247-3 CoolMOS E6, that includes CoolMOS E6 Series, they are designed to operate with a Tube Packaging, Part Aliases is shown on datasheet note for use in a IPW65R190E6FKSA1 IPW65R190E6XK SP000863906, that offers Unit Weight features such as 1.340411 oz, Mounting Style is designed to work in Through Hole, as well as the CoolMOS Tradename, the device can also be used as TO-247-3 Package Case. In addition, the Technology is Si, the device is offered in 1 Channel Number of Channels, the device has a Single of Configuration, and Transistor Type is 1 N-Channel, and the Pd Power Dissipation is 151 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 10 ns, and the Rise Time is 12 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 20.2 A, and Vds Drain Source Breakdown Voltage is 700 V, and the Rds On Drain Source Resistance is 190 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 133 nS, and Qg Gate Charge is 73 nC.

The IPW65R280E6 is MOSFET N-CH 650V 13.8A TO247, that includes Single Configuration, they are designed to operate with a 12 ns Fall Time, Id Continuous Drain Current is shown on datasheet note for use in a 13.8 A, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, as well as the Through Hole Mounting Style, the device can also be used as 1 Channel Number of Channels. In addition, the Package Case is TO-247-3, the device is offered in Tube Packaging, the device has a IPW65R280E6FKSA1 IPW65R280E6XK SP000795272 of Part Aliases, and Pd Power Dissipation is 104 W, and the Qg Gate Charge is 45 nC, and Rds On Drain Source Resistance is 280 mOhms, and the Rise Time is 11 ns, and Series is CoolMOS E6, and the Technology is Si, and Tradename is CoolMOS, and the Transistor Polarity is N-Channel, and Transistor Type is 1 N-Channel, and the Typical Turn Off Delay Time is 105 nS, and Unit Weight is 1.340411 oz, and the Vds Drain Source Breakdown Voltage is 700 V, and Vgs Gate Source Voltage is 20 V.

Features

CoolMOS CFD2™ Series
Bulk Package
MOSFET (Metal Oxide) Technology
650 V Drain to Source Voltage (Vdss)
11.4A (Tc) Current - Continuous Drain (Id) @ 25°C
10V Drive Voltage (Max Rds On, Min Rds On)
310mOhm @ 4.4A, 10V Rds On (Max) @ Id, Vgs
4.5V @ 440µA Vgs(th) (Max) @ Id
41 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±20V Vgs (Max)
1100 pF @ 100 V Input Capacitance (Ciss) (Max) @ Vds
104.2W (Tc) Power Dissipation (Max)
Through Hole Mounting Type