Infineon IPP60R180C7

N 通道600 V13A（Tc）4V @ 260µA68W（Tc）-55°C ~ 150°C（TJ）通孔

Overview

The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.

Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss.

Features

CoolMOS™ Series
Bulk Package
MOSFET (Metal Oxide) Technology
600 V Drain to Source Voltage (Vdss)
13A (Tc) Current - Continuous Drain (Id) @ 25°C
10V Drive Voltage (Max Rds On, Min Rds On)
180mOhm @ 5.3A, 10V Rds On (Max) @ Id, Vgs
4V @ 260µA Vgs(th) (Max) @ Id
24 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±20V Vgs (Max)
1080 pF @ 400 V Input Capacitance (Ciss) (Max) @ Vds
68W (Tc) Power Dissipation (Max)
Through Hole Mounting Type