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IPD50N06S4L12ATMA2

Infineon IPD50N06S4L12ATMA2

N 通道60 V50A(Tc)2.2V @ 20µA50W(Tc)-55°C ~ 175°C(TJ)表面贴装型

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IPD50N06S4L12ATMA2
MOSFET N-CH 60V 50A TO252-31
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¥2.82

价格更新:一个月前

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产品详情

Overview

The IPD50N06S4L-12 is MOSFET N-Ch 60V 50A DPAK-2 OptiMOS-T2, that includes OptiMOS-T2 Series, they are designed to operate with a Reel Packaging, Part Aliases is shown on datasheet note for use in a IPD50N06S4L12ATMA1 IPD50N06S4L12ATMA2 IPD50N06S4L12XT SP001028640, that offers Unit Weight features such as 0.139332 oz, Mounting Style is designed to work in SMD/SMT, as well as the OptiMOS Tradename, the device can also be used as TO-252-3 Package Case. In addition, the Technology is Si, the device is offered in 1 Channel Number of Channels, the device has a Single of Configuration, and Transistor Type is 1 N-Channel, and the Pd Power Dissipation is 50 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 5 ns, and the Rise Time is 2 ns, and Vgs Gate Source Voltage is 16 V, and the Id Continuous Drain Current is 50 A, and Vds Drain Source Breakdown Voltage is 60 V, and the Vgs th Gate Source Threshold Voltage is 1.7 V, and Rds On Drain Source Resistance is 12 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 25 ns, and the Typical Turn On Delay Time is 6 ns, and Qg Gate Charge is 30 nC, and the Channel Mode is Enhancement.

IPD50N06S4L08ATMA2 with circuit diagram, that includes 1 Channel Number of Channels, they are designed to operate with a TO-252-3 Package Case, Packaging is shown on datasheet note for use in a Reel, that offers Part Aliases features such as IPD50N06S4L-08 IPD50N06S4L08XT SP001028664, Series is designed to work in IPD50N06, as well as the Si Technology, the device can also be used as N-Channel Transistor Polarity. In addition, the Transistor Type is 1 N-Channel.

Features

Tape & Reel (TR) Package


  • 175°C operating temperature

  • Green Product (RoHS compliant)

  • 100% Avalanche tested

  • N-channel - Enhancement mode

  • AEC Q101 qualified

  • MSL1 up to 260°C peak reflow



Surface Mount Mounting Type

Applications


  • Switch-mode power supplies (SMPS) Relays

  • Converters

  • Power amplifiers

  • Controlling

  • Generate electrical signals


产品属性
全选
型号系列: Automotive, AEC-Q101, OptiMOS™
包装: 卷带(TR)
部件状态: 在售
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 60 V
25°C 时电流 - 连续漏极 (Id): 50A(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 4.5V,10V
漏极电流和栅极至源极电压下的最大导通电阻: 12 毫欧 @ 50A,10V
漏极电流下的最大栅极阈值电压: 2.2V @ 20µA
最大栅极电荷 (Qg) @ Vgs: 40 nC @ 10 V
最大栅极源电压: ±16V
Vds 时的最大输入电容 (Ciss): 2890 pF @ 25 V
最大功率耗散: 50W(Tc)
工作温度: -55°C ~ 175°C(TJ)
安装类型: 表面贴装型
供应商器件封装: PG-TO252-3-11
封装/外壳: TO-252-3,DPak(2 引线 + 接片),SC-63
Infineon Technologies

Infineon Technologies

Infineon Technologies是一家全球领先的半导体公司,成立于1999年,总部位于德国慕尼黑。公司专注于提供高性能的功率半导体、传感器和微控制器解决方案,服务于汽车、工业、电源管理和物联网等领域。

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