Infineon IKW25N120H3FKSA1

1200 V50 A2.65mJ-40°C ~ 175°C（TJ）TO-247-3

Overview

The IKW25N120H3FKSA1 is a High Speed IGBT in Trench and field-stop technology with soft, fast recovery anti-parallel diode. The high speed device is used to reduce the size of the active components (25 to 70kHz). The high speed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-OFF switching behaviour, leading to low turn-OFF losses. Furthermore, up to 15% efficiency improvement can be achieved by implementing this technology in your design.

Features

TrenchStop® Series
Tube Package
Trench Field Stop IGBT Type
1200 V Voltage - Collector Emitter Breakdown (Max)
50 A Current - Collector (Ic) (Max)
100 A Current - Collector Pulsed (Icm)
2.4V @ 15V, 25A Vce(on) (Max) @ Vge, Ic
326 W Power - Max
2.65mJ Switching Energy
Standard Input Type
115 nC Gate Charge
27ns/277ns Td (on/off) @ 25°C
600V, 25A, 23Ohm, 15V Test Condition
290 ns Reverse Recovery Time (trr)
Through Hole Mounting Type