Infineon IKQ75N120CH3XKSA1

1200 V150 A6.4mJ（开），2.8mJ（关）-40°C ~ 175°C（TJ）TO-247-3

Overview

High Speed 1200 V, 75 A highspeed IGBT3 co-packed with a soft and fast recovery full current anti-parallel emitter controlled diode in a TO-247 package.

Features

·Industrial UPS Charger

·Energy Storage

·Three-level Solar String nverter·Welding

Applications

High speed H3 technology offers:

*High efficiency in hard switching and resonant topologies·10usec short circuit withstand time atT=175°C

·Easy paralleling capability due to positive temperature coefficient in Vcesat

·Low EMI

·Low Gate Charge QG

·Very soft, fast recovery full current anti-parallel diode·MaximumjunctiontemperatureTmax=175°℃·Pb-free lead plating:RoHS complian