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IKQ50N120CH3XKSA1

Infineon IKQ50N120CH3XKSA1

1200 V100 A3mJ(开),1.9mJ(关)-40°C ~ 175°C(TJ)TO-247-3

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IKQ50N120CH3XKSA1
IGBT 1200V 100A TO247-3-46
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¥148.80

价格更新:一个月前

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产品详情

Overview

IKQ100N60TAXKSA1 with pin details, that includes Automotive, AEC-Q101, TrenchStop? Series, they are designed to operate with a Tube Packaging, Part Aliases is shown on datasheet note for use in a IKQ100N60TA SP001144016, that offers Package Case features such as TO-247-3, Input Type is designed to work in Standard, as well as the Through Hole Mounting Type, the device can also be used as PG-TO247-3-46 Supplier Device Package. In addition, the Power Max is 714W, the device is offered in 225ns Reverse Recovery Time trr, the device has a 160A of Current Collector Ic Max, and Voltage Collector Emitter Breakdown Max is 600V, and the IGBT Type is Trench Field Stop, and Current Collector Pulsed Icm is 400A, and the Vce on Max Vge Ic is 2V @ 15V, 100A, and Switching Energy is 3.1mJ (on), 2.5mJ (off), and the Gate Charge is 610nC, and Td on off 25°C is 30ns/290ns, and the Test Condition is 400V, 100A, 3.6 Ohm, 15V.

IKQ120N60TXKSA1 with EDA / CAD Models, that includes Tube Packaging, they are designed to operate with a TrenchStop? Series, IGBT Type is shown on datasheet note for use in a Trench Field Stop, that offers Package Case features such as TO-247-3, Mounting Type is designed to work in Through Hole, as well as the Standard Input Type, the device can also be used as PG-TO247-3-46 Supplier Device Package. In addition, the Part Aliases is IKQ120N60T SP001138292, the device is offered in 833W Power Max, the device has a 703nC of Gate Charge, and Voltage Collector Emitter Breakdown Max is 600V, and the Switching Energy is 6.2mJ (on), 5.9mJ (off), and Td on off 25°C is 50ns/565ns, and the Current Collector Pulsed Icm is 480A, and Test Condition is 400V, 120A, 3 Ohm, 15V, and the Vce on Max Vge Ic is 2V @ 15V, 120A, and Reverse Recovery Time trr is 241ns, and the Current Collector Ic Max is 160A.

Features

Tube Package


High efficiency in hard switching and resonant topologies

10μsec short circuit withstand time at Tvj=175°C 

Easy paralleling capability due to positive temperature coefficient in VcEsat

Low EMI

Low Gate Charge QG

Very soft, fast recovery full current anti-parallel diode

Maximum junction temperature Tvjmax=175°C

Pb-free lead plating; RoHS compliant



Through Hole Mounting Type

Applications


Industrial UPS

Charger

Energy Storage

Three-level Solar String Inverter

Welding


产品属性
全选
包装: 管件
部件状态: 不适用于新设计
最大集电极-发射极击穿电压: 1200 V
集电极电流 (Ic)(最大值): 100 A
电流 - 集电极脉冲 (Icm): 200 A
栅极-发射极电压和集电极电流时的最大集电极-发射极导通电压: 2.35V @ 15V,50A
最大功率: 652 W
开关能量: 3mJ(开),1.9mJ(关)
输入类型: 标准
栅极电荷: 235 nC
25°C 时的开/关延迟时间: 34ns/297ns
测试条件: 600V,50A,10 欧姆,15V
工作温度: -40°C ~ 175°C(TJ)
安装类型: 通孔
封装/外壳: TO-247-3
供应商器件封装: PG-TO247-3-46
Infineon Technologies

Infineon Technologies

Infineon Technologies是一家全球领先的半导体公司,成立于1999年,总部位于德国慕尼黑。公司专注于提供高性能的功率半导体、传感器和微控制器解决方案,服务于汽车、工业、电源管理和物联网等领域。

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