Infineon IGW25N120H3FKSA1

1200 V50 A2.65mJ-40°C ~ 175°C（TJ）TO-247-3

Overview

The IGW25N120H3FKSA1 is a High Speed IGBT in Trench and field-stop technology recommended in combination with SiC diode IDH15S120. The high speed device is used to reduce the size of the active components (25 to 70kHz). The high speed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-OFF switching behaviour, leading to low turn-OFF losses. Furthermore, up to 15% efficiency improvement can be achieved by implementing this technology in your design.

Features

TRENCHSTOPTM technology offering

best in class switching performance: less than 500μJ total switching losses achievable

very low VCEsat

low EMI

maximum junction temperature 175°C

qualified according to JEDEC for target applications

Pb-free lead plating; RoHS compliant

Applications

solar inverters

uninterruptible power supplies

welding converters

converters with the high switching frequency