Infineon FS50R07N2E4

沟槽型场截止650 V70 A190 W-40°C ~ 150°C（TJ）

Overview

FS50R06W1E3_B11 with pin details, that includes IGBT Silicon Modules Product, they are designed to operate with a Tray Packaging, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as Module, Configuration is designed to work in IGBT-Inverter, as well as the 205 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 40 C, the device is offered in 600 V Collector Emitter Voltage VCEO Max, the device has a 1.45 V of Collector Emitter Saturation Voltage, and Continuous Collector Current at 25 C is 70 A, and the Gate Emitter Leakage Current is 400 nA, and Maximum Gate Emitter Voltage is +/- 20 V.

The FS50R06YL4 is IGBT Modules N-CH 600V 55A manufactured by EUPEC. The FS50R06YL4 is available in MODULE Package, is part of the Module, , and with support for IGBT Modules N-CH 600V 55A.

Features

EconoPACK™2 Series
Bulk Package
Trench Field Stop IGBT Type
Three Phase Inverter Configuration
650 V Voltage - Collector Emitter Breakdown (Max)
70 A Current - Collector (Ic) (Max)
190 W Power - Max
1.95V @ 15V, 50A Vce(on) (Max) @ Vge, Ic
1 mA Current - Collector Cutoff (Max)
3.1 nF @ 25 V Input Capacitance (Cies) @ Vce
Standard Input
Yes NTC Thermistor
Chassis Mount Mounting Type
Module Package / Case
Module Supplier Device Package