Infineon FS100R12KT4PB15BPSA1

沟槽型场截止1200 V100 A515 W-40°C ~ 150°C（TJ）

Overview

The FS100R12KS4 is IGBT Modules 1200V 100A 3-PHASE, that includes IGBT Silicon Modules Product, they are designed to operate with a Screw Mounting Style, Package Case is shown on datasheet note for use in a EconoPACK 3A, that offers Configuration features such as Hex, Pd Power Dissipation is designed to work in 660 W, it has an Maximum Operating Temperature range of + 125 C, it has an Minimum Operating Temperature range of - 40 C. In addition, the Collector Emitter Voltage VCEO Max is 1200 V, the device is offered in 3.2 V Collector Emitter Saturation Voltage, the device has a 130 A of Continuous Collector Current at 25 C, and Gate Emitter Leakage Current is 400 nA, and the Maximum Gate Emitter Voltage is +/- 20 V.

FS100R12KT4_B11 with EDA / CAD Models manufactured by Infineon. is part of the IGBTs - Modules, , and with support for IGBT Modules IGBT 1200V 100A.

Features

Bulk Package
Trench Field Stop IGBT Type
Full Bridge Inverter Configuration
1200 V Voltage - Collector Emitter Breakdown (Max)
100 A Current - Collector (Ic) (Max)
515 W Power - Max
2.1V @ 15V, 100A Vce(on) (Max) @ Vge, Ic
1 mA Current - Collector Cutoff (Max)
6.3 nF @ 25 V Input Capacitance (Cies) @ Vce
Standard Input
No NTC Thermistor
Chassis Mount Mounting Type
Module Package / Case