Infineon FF200R17KE3HOSA1

沟槽型场截止1700 V310 A1250 W-40°C ~ 125°C（TJ）

Overview

62 mm 1700 V, 200 A dual IGBT module with TRENCHSTOP™ IGBT3 and Emitter Controlled Diode.

Features

C Series
Tray Package
Trench Field Stop IGBT Type
Half Bridge Configuration
1700 V Voltage - Collector Emitter Breakdown (Max)
310 A Current - Collector (Ic) (Max)
1250 W Power - Max
2.45V @ 15V, 200A Vce(on) (Max) @ Vge, Ic
3 mA Current - Collector Cutoff (Max)
18 nF @ 25 V Input Capacitance (Cies) @ Vce
Standard Input
No NTC Thermistor
Chassis Mount Mounting Type
Module Package / Case
Module Supplier Device Package