Infineon FF150R12RT4HOSA1

沟槽型场截止1200 V150 A790 W-40°C ~ 150°C（TJ）

Overview

The FF150R12ME3G is IGBT Modules N-CH 1.2KV 200A, that includes IGBT Silicon Modules Product, they are designed to operate with a Tray Packaging, Mounting Style is shown on datasheet note for use in a Screw, that offers Package Case features such as EconoDUAL-3, Configuration is designed to work in Dual, as well as the 695 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 125 C, it has an Minimum Operating Temperature range of - 40 C, the device is offered in 1200 V Collector Emitter Voltage VCEO Max, the device has a 1.7 V of Collector Emitter Saturation Voltage, and Continuous Collector Current at 25 C is 200 A, and the Gate Emitter Leakage Current is 400 nA, and Maximum Gate Emitter Voltage is +/- 20 V.

The FF150R12RT4 is IGBT Modules IGBT 1200V 150A manufactured by Infineon. The FF150R12RT4 is available in MODULE Package, is part of the Module, , and with support for IGBT Modules IGBT 1200V 150A.

Features

Low Current High Voltage Requlators

Requlator for Battery-Powered Systems

Telecom Applications

Automotive Applications

Applications

Wide Input Voltage Range:3V to80V

Low Quiescent Current:7uA

 Low Dropout Voltage:350mV

Output Current:20mA

LT3014BHV Survives 100V Transients(2ms
No Protection Diodes Needed

Adjustable Output from 1.22Vto60V