联系我们
中文
FF11MR12W1M1B11BOMA1

Infineon FF11MR12W1M1B11BOMA1

碳化硅(SiC)2 N-通道(双)1200V(1.2kV)100A11 毫欧 @ 100A,15V5.55V @ 40mA

比较
FF11MR12W1M1B11BOMA1
MOSFET 2N-CH 1200V 100A MODULE
paypalvisamastercarddiscover
upsdhlsf
比较

面议

价格更新:一个月前

博斯克质量保证

912ob9001 201514001 201545001 201813485 2016esdduns
产品详情

Overview

The FF119 is FAN FILTER ASSEMBLY 119MM, that includes Polycarbonate Material, they are designed to operate with a Filters Series, Packaging is shown on datasheet note for use in a Bulk, that offers Fan Accessory Type features such as Filter Guard Assembly, Fits Fan Size is designed to work in 119mm Sq.

FF1152-E2 with EDA / CAD Models manufactured by ROHM. The FF1152-E2 is available in QFP Package, is part of the IC Chips.

Features

CoolSiC™+ Series

Trench MOSFET FF11MR12W1M1B11BOMA1 Construction Similar to any other MOSFET, a trench MOSFET cell contains the drain, gate, source, body and the channel regions but exhibits a vertical direction of current flow. All the cells are connected to work in parallel in order to reduce the value of RON.

 

Module Supplier Device Package

Applications


High Frequency Switching application

DC/DC converter

Solar applications

UPS systems

 

FF11MR12W1M1B11BOMA1                 Features


?¤High current density

?¤Low inductive design

?¤Low switching losses



产品属性
全选
型号系列: CoolSiC™+
包装: 散装
部件状态: 停产
技术: 碳化硅(SiC)
配置: 2 N-通道(双)
漏源电压(Vdss): 1200V(1.2kV)
25°C 时电流 - 连续漏极 (Id): 100A
漏极电流和栅极至源极电压下的最大导通电阻: 11 毫欧 @ 100A,15V
漏极电流下的最大栅极阈值电压: 5.55V @ 40mA
最大栅极电荷 (Qg) @ Vgs: 250nC @ 15V
Vds 时的最大输入电容 (Ciss): 7950pF @ 800V
工作温度: -40°C ~ 150°C(TJ)
安装类型: 底座安装
封装/外壳: 模块
供应商器件封装: 模块
Infineon Technologies

Infineon Technologies

Infineon Technologies是一家全球领先的半导体公司,成立于1999年,总部位于德国慕尼黑。公司专注于提供高性能的功率半导体、传感器和微控制器解决方案,服务于汽车、工业、电源管理和物联网等领域。

实时新闻

博斯克数字

收入: 85M

2022年的收入为8500万美元,与2021年增长63%。

国家: 105

博斯克服务全球105个国家的客户。

配件发货: 25M+

我们在过去的五年中发货了2.5亿个配件,比前五年增长148%。

制造商: 950

2022年,博斯克从近950个制造商售卖了配件。

所有产品零件号 0 - Z