Infineon F445MR12W1M1B76BPSA1

碳化硅（SiC）4 N 沟道（半桥）1200V（1.2kV）25A（Tj）45 毫欧 @ 25A，15V5.55V @ 10mA

Overview

F4214IN BK107 with pin details, that includes Black Color, they are designed to operate with a Polyolefin (PO), Irradiated Material, Series is shown on datasheet note for use in a FITR-421, that offers Type features such as Tubing, Flexible, Length is designed to work in 4.00' (1.22m), it has an Operating Temperature range of -55°C ~ 135°C, the device can also be used as Flame Retardant, Fluid Resistant, Heat Resistant, UV Resistant Features. In addition, the Shrinkage Ratio is 4 to 1, the device is offered in 4.000" (101.6mm) Inner Diameter Supplied, the device has a 1.050" (26.7mm) of Inner Diameter Recovered, and Recovered Wall Thickness is 0.045" (1.14mm), and the Shrink Temperature is 90°C.

F422 with EDA / CAD Models manufactured by NM/NM. The F422 is available in T092 Package, is part of the IC Chips.

Features

EasyPACK™ CoolSiC™ Series
Tray Package
Silicon Carbide (SiC) Technology
1200V (1.2kV) Drain to Source Voltage (Vdss)
25A (Tj) Current - Continuous Drain (Id) @ 25°C
45mOhm @ 25A, 15V Rds On (Max) @ Id, Vgs
5.55V @ 10mA Vgs(th) (Max) @ Id
62nC @ 15V Gate Charge (Qg) (Max) @ Vgs
1840pF @ 800V Input Capacitance (Ciss) (Max) @ Vds
Chassis Mount Mounting Type
Module Package / Case