Infineon BSZ15DC02KDHXTMA1

MOSFET（金属氧化物）逻辑电平栅极，2.5V 驱动N 和 P 沟道互补型20V5.1A，3.2A55 毫欧 @ 5.1A，4.5V1.4V @ 110µA

Overview

BSZ150N10LS3GATMA1 with pin details, that includes BSZ15DC02 Series, they are designed to operate with a Reel Packaging, Part Aliases is shown on datasheet note for use in a BSZ150N10LS3 G SP001002916, that offers Tradename features such as OptiMOS, Package Case is designed to work in TSDSON-8, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Transistor Type is 1 N-Channel, the device is offered in 40 A Id Continuous Drain Current, the device has a 100 V of Vds Drain Source Breakdown Voltage, and Rds On Drain Source Resistance is 15 mOhms, and the Transistor Polarity is N-Channel.

BSZ15DC02KD H with circuit diagram, that includes 1 Channel Number of Channels, they are designed to operate with a Reel Packaging, Part Aliases is shown on datasheet note for use in a BSZ15DC02KDHXTMA1 SP000961028, that offers Series features such as BSZ15DC02, Technology is designed to work in Si, as well as the P-Channel Transistor Polarity, the device can also be used as 1 P-Channel Transistor Type.

Features

• P + N complementary channel

• Improvement mode

• Level Super Logic (2.5V rated)

• Common sewer

• Rated Avalanche

• operating temperature of 175 ??C

• According to AEC Q101, qualified

• 100 percent lead-free; compliant with RoHS

Applications

Switching applications