
Infineon BSO150N03MDGXUMA1
MOSFET(金属氧化物)逻辑电平门2 N-通道(双)30V8A15 毫欧 @ 9.3A,10V2V @ 250µA
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¥3.09
价格更新:一个月前博斯克质量保证







Overview
The BSO150N03MD G is MOSFET 2N-CH 30V 8A 8DSO, that includes OptiMOS? Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Part Aliases is shown on datasheet note for use in a BSO150N03MDGXT BSO150N03MDGXUMA1 SP000447476, that offers Mounting Style features such as SMD/SMT, Tradename is designed to work in OptiMOS, as well as the 8-SOIC (0.154", 3.90mm Width) Package Case, the device can also be used as Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in Surface Mount Mounting Type, the device has a 2 Channel of Number of Channels, and Supplier Device Package is PG-DSO-8, and the Configuration is Dual Dual Drain, and FET Type is 2 N-Channel (Dual), and the Power Max is 1.4W, and Transistor Type is 2 N-Channel, and the Drain to Source Voltage Vdss is 30V, and Input Capacitance Ciss Vds is 1300pF @ 15V, and the FET Feature is Logic Level Gate, and Current Continuous Drain Id 25°C is 8A, and the Rds On Max Id Vgs is 15 mOhm @ 9.3A, 10V, and Vgs th Max Id is 2V @ 250μA, and the Gate Charge Qg Vgs is 17nC @ 10V, and Pd Power Dissipation is 1.4 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 3.8 ns, and Rise Time is 3.8 ns, and the Vgs Gate Source Voltage is 16 V, and Id Continuous Drain Current is 9.3 A, and the Vds Drain Source Breakdown Voltage is 30 V, and Rds On Drain Source Resistance is 15 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 8.7 ns, and the Typical Turn On Delay Time is 7.3 ns, and Channel Mode is Enhancement.
BSO150N03MDG with circuit diagram manufactured by INFINEON. The BSO150N03MDG is available in SOP-8 Package, is part of the FETs - Arrays.
Features
OptiMOS™ SeriesTape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
30V Drain to Source Voltage (Vdss)
8A Current - Continuous Drain (Id) @ 25°C
15mOhm @ 9.3A, 10V Rds On (Max) @ Id, Vgs
2V @ 250µA Vgs(th) (Max) @ Id
17nC @ 10V Gate Charge (Qg) (Max) @ Vgs
1300pF @ 15V Input Capacitance (Ciss) (Max) @ Vds
1.4W Power - Max
Surface Mount Mounting Type
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Infineon Technologies
Infineon Technologies是一家全球领先的半导体公司,成立于1999年,总部位于德国慕尼黑。公司专注于提供高性能的功率半导体、传感器和微控制器解决方案,服务于汽车、工业、电源管理和物联网等领域。
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