Infineon BGA5M1BN6E6327XTSA1

1.805GHz ~ 2.2GHz-17dBm19.3dB0.65dB1.5V ~ 3.6V

Overview

The BG 3130R H6327 is RF MOSFET Transistors RF MOSFETS, that includes BG3130 Series, they are designed to operate with a RF Small Signal MOSFET Type, Packaging is shown on datasheet note for use in a Reel, that offers Part Aliases features such as BG3130RH6327XT BG3130RH6327XTSA1 SP000753496, Unit Weight is designed to work in 0.000212 oz, as well as the SMD/SMT Mounting Style, the device can also be used as SOT-363 Package Case. In addition, the Technology is Si, the device is offered in 24 dB Gain, the device has a 200 mW of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, and the Operating Frequency is 800 MHz, and Vgs Gate Source Voltage is 6 V, and the Id Continuous Drain Current is 25 mA, and Vds Drain Source Breakdown Voltage is 12 V, and the Transistor Polarity is N-Channel.

BG with EDA / CAD Models manufactured by VISHAY. The BG is available in SMA Package, is part of the IC Chips.

Features

Tape & Reel (TR) Package
RF Type LTE
1.5V~3.6V voltage
9.5mA current

Surface Mount Mounting Type

Applications

There are a lot of Infineon Technologies
BGA5M1BN6E6327XTSA1 RF Amplifiers applications.

• Recreational
• Marine Navigation
• Avionics
• GPS
• GLONASS
• BeiDou
• Galileo
• Wireless communications
• ISM applications
• Wireless infrastructure