Infineon BFP640H6327XTSA1

NPN4.5V40GHz

Overview

A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon’s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.

Features

Tape & Reel (TR) Package
NPN Transistor Type
4.5V Voltage - Collector Emitter Breakdown (Max)
40GHz Frequency - Transition
0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz Noise Figure (dB Typ @ f)
12.5dB Gain
200mW Power - Max
110 @ 30mA, 3V DC Current Gain (hFE) (Min) @ Ic, Vce
50mA Current - Collector (Ic) (Max)
150°C (TJ) Operating Temperature
Surface Mount Mounting Type