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BC856S E6433

Infineon BC856S E6433

2 PNP(双)100mA65V

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BC856S E6433
BIPOLAR GEN PURPOSE TRANSISTOR
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¥0.22

价格更新:一个月前

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产品详情

Overview

The BC 850B E6327 is Bipolar Transistors - BJT NPN SilicnAF TRNSTRS, that includes BC850 Series, they are designed to operate with a Reel Packaging, Part Aliases is shown on datasheet note for use in a BC850BE6327HTSA1 BC850BE6327XT SP000010572, that offers Unit Weight features such as 0.050717 oz, Mounting Style is designed to work in SMD/SMT, as well as the SOT-23-3 Package Case, the device can also be used as Single Configuration. In addition, the Pd Power Dissipation is 330 mW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 65 C, and Collector Emitter Voltage VCEO Max is 45 V, and the Transistor Polarity is NPN, and Collector Base Voltage VCBO is 50 V, and the Emitter Base Voltage VEBO is 6 V, and Maximum DC Collector Current is 0.1 A, and the Gain Bandwidth Product fT is 250 MHz (Typ), and Continuous Collector Current is 0.1 A.

The BC 850CW H6327 is Bipolar Transistors - BJT AF TRANSISTOR, that includes SOT-323 Package Case, they are designed to operate with a SMD/SMT Mounting Style, Packaging is shown on datasheet note for use in a Reel, that offers Transistor Polarity features such as NPN, Part Aliases is designed to work in BC850CWH6327XT BC850CWH6327XTSA1 SP000747418, as well as the BC850 Series, the device can also be used as 600 mV Collector Emitter Saturation Voltage. In addition, the Emitter Base Voltage VEBO is 6 V, the device is offered in 50 V Collector Emitter Voltage VCEO Max, the device has a 50 V of Collector Base Voltage VCBO, and Pd Power Dissipation is 330 mW, and the Maximum DC Collector Current is 100 mA, and Continuous Collector Current is 100 mA, and the Unit Weight is 0.002116 oz.

Features

Bulk Package
2 PNP (Dual) Transistor Type
100mA Current - Collector (Ic) (Max)
65V Voltage - Collector Emitter Breakdown (Max)
650mV @ 5mA, 100mA Vce Saturation (Max) @ Ib, Ic
15nA (ICBO) Current - Collector Cutoff (Max)
200 @ 2mA, 5V DC Current Gain (hFE) (Min) @ Ic, Vce
250mW Power - Max
250MHz Frequency - Transition
150°C (TJ) Operating Temperature
Surface Mount Mounting Type
产品属性
全选
包装: 散装
部件状态: 在售
晶体管类型: 2 PNP(双)
集电极电流 (Ic)(最大值): 100mA
最大集电极-发射极击穿电压: 65V
基极电流和集电极电流下的最大集电极-发射极饱和电压: 650mV @ 5mA,100mA
电流 - 集电极截止(最大值): 15nA(ICBO)
直流电流增益 (hFE) 最小值 @ Ic、Vce: 200 @ 2mA,5V
最大功率: 250mW
频率 - 跃迁: 250MHz
工作温度: 150°C(TJ)
安装类型: 表面贴装型
封装/外壳: 6-VSSOP,SC-88,SOT-363
供应商器件封装: SOT-363
Infineon Technologies

Infineon Technologies

Infineon Technologies是一家全球领先的半导体公司,成立于1999年,总部位于德国慕尼黑。公司专注于提供高性能的功率半导体、传感器和微控制器解决方案,服务于汽车、工业、电源管理和物联网等领域。

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