
Infineon BC856S E6433
2 PNP(双)100mA65V
比较






¥0.22
价格更新:一个月前博斯克质量保证







Overview
The BC 850B E6327 is Bipolar Transistors - BJT NPN SilicnAF TRNSTRS, that includes BC850 Series, they are designed to operate with a Reel Packaging, Part Aliases is shown on datasheet note for use in a BC850BE6327HTSA1 BC850BE6327XT SP000010572, that offers Unit Weight features such as 0.050717 oz, Mounting Style is designed to work in SMD/SMT, as well as the SOT-23-3 Package Case, the device can also be used as Single Configuration. In addition, the Pd Power Dissipation is 330 mW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 65 C, and Collector Emitter Voltage VCEO Max is 45 V, and the Transistor Polarity is NPN, and Collector Base Voltage VCBO is 50 V, and the Emitter Base Voltage VEBO is 6 V, and Maximum DC Collector Current is 0.1 A, and the Gain Bandwidth Product fT is 250 MHz (Typ), and Continuous Collector Current is 0.1 A.
The BC 850CW H6327 is Bipolar Transistors - BJT AF TRANSISTOR, that includes SOT-323 Package Case, they are designed to operate with a SMD/SMT Mounting Style, Packaging is shown on datasheet note for use in a Reel, that offers Transistor Polarity features such as NPN, Part Aliases is designed to work in BC850CWH6327XT BC850CWH6327XTSA1 SP000747418, as well as the BC850 Series, the device can also be used as 600 mV Collector Emitter Saturation Voltage. In addition, the Emitter Base Voltage VEBO is 6 V, the device is offered in 50 V Collector Emitter Voltage VCEO Max, the device has a 50 V of Collector Base Voltage VCBO, and Pd Power Dissipation is 330 mW, and the Maximum DC Collector Current is 100 mA, and Continuous Collector Current is 100 mA, and the Unit Weight is 0.002116 oz.
Features
Bulk Package2 PNP (Dual) Transistor Type
100mA Current - Collector (Ic) (Max)
65V Voltage - Collector Emitter Breakdown (Max)
650mV @ 5mA, 100mA Vce Saturation (Max) @ Ib, Ic
15nA (ICBO) Current - Collector Cutoff (Max)
200 @ 2mA, 5V DC Current Gain (hFE) (Min) @ Ic, Vce
250mW Power - Max
250MHz Frequency - Transition
150°C (TJ) Operating Temperature
Surface Mount Mounting Type
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Infineon Technologies
Infineon Technologies是一家全球领先的半导体公司,成立于1999年,总部位于德国慕尼黑。公司专注于提供高性能的功率半导体、传感器和微控制器解决方案,服务于汽车、工业、电源管理和物联网等领域。
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