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AUIRF7749L2TR

Infineon AUIRF7749L2TR

N 通道60 V36A(Ta),345A(Tc)4V @ 250µA3.8W(Ta),341W(Tc)-55°C ~ 175°C(TJ)表面贴装型

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AUIRF7749L2TR
MOSFET N-CH 60V 36A DIRECTFET
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¥20.20

价格更新:一个月前

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产品详情

Overview

The AUIRF7738L2TR is MOSFET 40V AUTOGRADE 1 N-CH HEXFET 1.6mOhms, that includes Reel Packaging, they are designed to operate with a SMD/SMT Mounting Style, Package Case is shown on datasheet note for use in a DirectFET-13, that offers Technology features such as Si, Number of Channels is designed to work in 1 Channel, as well as the Single Hex Drain Hex Source Configuration, the device can also be used as 1 N-Channel Transistor Type. In addition, the Pd Power Dissipation is 94 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 38 ns, and the Rise Time is 77 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 184 A, and Vds Drain Source Breakdown Voltage is 40 V, and the Rds On Drain Source Resistance is 1.6 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 39 ns, and Typical Turn On Delay Time is 21 ns, and the Qg Gate Charge is 129 nC, and Channel Mode is Enhancement.

AUIRF7739L2TR1 with circuit diagram manufactured by IR. The AUIRF7739L2TR1 is available in DIRECTFETL8 Package, is part of the IC Chips.

Features

Tape & Reel (TR) Package


  • Advanced Process Technology

  • Optimized for Automotive Motor Drive, DC-DC, and other Heavy Load Applications

  • Exceptionally Small Footprint and Low Profile

  • High Power Density

  • Low Parasitic Parameters

  • Dual Sided Cooling

  • 175°C Operating Temperature

  • Repetitive Avalanche Allowed up to Tjmax



DirectFET™ Isometric L8 Package / Case

Applications


  • Cellular phones 

  • Laptop computers

  • Photovoltaic systems 

  • Wind turbines

  • Automotive Motor Drive


产品属性
全选
型号系列: Automotive, AEC-Q101, OptiMOS™
包装: 卷带(TR)
部件状态: 在售
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 60 V
25°C 时电流 - 连续漏极 (Id): 36A(Ta),345A(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 10V
漏极电流和栅极至源极电压下的最大导通电阻: 1.5 毫欧 @ 120A,10V
漏极电流下的最大栅极阈值电压: 4V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 275 nC @ 10 V
最大栅极源电压: ±20V
Vds 时的最大输入电容 (Ciss): 10655 pF @ 25 V
最大功率耗散: 3.8W(Ta),341W(Tc)
工作温度: -55°C ~ 175°C(TJ)
安装类型: 表面贴装型
供应商器件封装: DirectFET™ 等距 L8
封装/外壳: DirectFET™ 等距 L8
Infineon Technologies

Infineon Technologies

Infineon Technologies是一家全球领先的半导体公司,成立于1999年,总部位于德国慕尼黑。公司专注于提供高性能的功率半导体、传感器和微控制器解决方案,服务于汽车、工业、电源管理和物联网等领域。

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