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AUIRF6215STRL

Infineon AUIRF6215STRL

P 通道150 V13A(Tc)4V @ 250µA3.8W(Ta),110W(Tc)-55°C ~ 175°C(TJ)表面贴装型

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AUIRF6215STRL
MOSFET P-CH 150V 13A D2PAK
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¥24.75

价格更新:一个月前

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产品详情

Overview

The AUIRF540ZSTRR is MOSFET AUTO 100V 1 N-CH HEXFET 26.5mOhms, that includes Reel Packaging, they are designed to operate with a 0.139332 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as TO-252-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 92 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 39 ns, and Rise Time is 51 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 44 A, and the Vds Drain Source Breakdown Voltage is 100 V, and Rds On Drain Source Resistance is 26.5 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 43 ns, and the Typical Turn On Delay Time is 15 ns, and Channel Mode is Enhancement.

AUIRF6215S with circuit diagram manufactured by IR. is part of the Transistors - FETs, MOSFETs - Single, , and with support for "MOSFET Automotive MOSFET 150V, P-Channel 150V 13A (Tc) 3.8W (Ta), 110W (Tc) Surface Mount D2PAK, Trans MOSFET P-CH Si 150V 13A Automotive 3-Pin(2+Tab) D2PAK Tube, MOSFET Automotive MOSFET 150V, 295mOhm, D2Pak.

Features

HEXFET® Series
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of -150V voltage
the turn-off delay time is 53 ns
based on its rated peak drain current 44A.
a 150V drain to source voltage (Vdss)

D2PAK Supplier Device Package

Applications


There are a lot of Infineon Technologies
AUIRF6215STRL applications of single MOSFETs transistors.

  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
产品属性
全选
型号系列: HEXFET®
包装: 卷带(TR)
部件状态: 不适用于新设计
FET 类型: P 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 150 V
25°C 时电流 - 连续漏极 (Id): 13A(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 10V
漏极电流和栅极至源极电压下的最大导通电阻: 290 毫欧 @ 6.6A,10V
漏极电流下的最大栅极阈值电压: 4V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 66 nC @ 10 V
最大栅极源电压: ±20V
Vds 时的最大输入电容 (Ciss): 860 pF @ 25 V
最大功率耗散: 3.8W(Ta),110W(Tc)
工作温度: -55°C ~ 175°C(TJ)
安装类型: 表面贴装型
供应商器件封装: D2PAK
封装/外壳: TO-263-3,D²Pak(2 引线 + 接片),TO-263AB
Infineon Technologies

Infineon Technologies

Infineon Technologies是一家全球领先的半导体公司,成立于1999年,总部位于德国慕尼黑。公司专注于提供高性能的功率半导体、传感器和微控制器解决方案,服务于汽车、工业、电源管理和物联网等领域。

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