Infineon 6ED003L06F2XUMA2

半桥613V ~ 17.5V

Overview

3-phase 600V MOSFET and IGBT gate driver ICs from Infineon based on proven existing SOI-technology. The absence of parasitic thyristor structures in these rugged devices prevents latch-up under all normal operating conditions. The drivers include under-voltage over-current detection and can be controlled by CMOS or LSTTL compatible signals down to 3.3V.

Maximum blocking voltage 600VSix independent driversControl via 3.3V logicUnder-voltage detection with hysteresisOver-current detection

Features

Bulk Package
6 Number of Drivers
13V ~ 17.5V Voltage - Supply
1.1V, 1.7V Logic Voltage - VIL, VIH
165mA, 375mA Current - Peak Output (Source, Sink)
620 V High Side Voltage - Max (Bootstrap)
60ns, 26ns Rise / Fall Time (Typ)
Surface Mount Mounting Type